At&t Bell Laboratories

Yeong-Her Wang

Alfred Yi Cho

George J Zydzik

Erdmann F Schubert

Sung-Nee George Chu

Henry M O'Bryan, Jr

Kuochou Tai

Rose F Kopf

Li-Wei Tu

Disclosed is a method for manufacturing a vertical cavity, surface-emitting laser. The method includes growing a distributed Bragg reflector having at least 10 layers of alternating composition on a gallium arsenide substrate. The growth surface of the substrate is tilted by an angle of 1.degree.-7.degree. from the orientation of a (100) surface toward the orientation of a (111)A surface. This results in improved reflectivity of the DBR.

Method for making a semiconductor laser

Optically transparent and electrically conductive cadmium tin oxide or indium tin oxide is employed in vertical cavity surface emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 .mu.m optical window which also serves as a vertical current injection inlet give lasing threshold currents as low as 3.8 mA. The differential series resistance is (350-450) .OMEGA. with a diode voltage of (5.1-5.6) V at the lasing threshold. Far field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7.degree..

Vertical cavity surface emmitting lasers with transparent electrodes

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Scotch Plains, NJ, United States of America

Yeong-Her Wang