Samsung Electro-mechanics Co., Ltd.

Yeong Gyu Lee

Duck Hwan Kim

Moon Chul Lee

Sang Uk Son

Jea Shik Shin

Chul Soo Kim

Heung Woo Park

Ho Soo Park

Suk Kee Hong

Tae Yoon Kim

Jae Chang Lee

Ho Joon Park

Jeong Suong Yang

Ohk Kun Lim

Jie Ai Yu

Hyung Goo Baek

Chang Su Park

Dong Hyun Park

Tae Kyung Lee

Sang Jin Kim

Sang Kyeong Yun

Tae Joon Park

Jin Suk Son

Sang Kee Yoon

Sung Sun Kim

Jun Mo An

Jong Hyeong Song

Kwang Su Kim

Dong Ho Shin

Hyun Kee Lee

Kyong Bok Min

Young Nam Hwang

Sang Hyun Yi

Yurlov Victor

Moon Chui Lee

Dong Woon Chang

Hyung Jae Park

Sung Won Im

Khudoyberdiyev Khurshidjon

A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

Resonator package and method of manufacturing the same

An acoustic resonator includes a substrate having via holes provided therein and having a membrane structure formed on a first surface of the substrate, and a cap accommodating the membrane structure and bonded to the substrate. The cap includes a support block in contact with the membrane structure.

Acoustic resonator and method for manufacturing the same

An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other, wherein the cap includes a trench formed around the bonding portion and a protective layer covering a surface of the trench in the cap, and wherein a portion of the bonding portion fills at least a portion of the trench.

Acoustic resonator package

An acoustic wave resonator includes: a substrate; a resonating portion formed on a first surface of the substrate; a metal pad connected to the resonating portion through a via hole formed in the substrate; and a protective layer disposed on a second surface of the substrate and including a plurality of layers, wherein the plurality of layers includes an internal protective layer directly in contact with the second surface of the substrate and formed of an insulating material including an adhesion that is stronger than an adhesion of other layers, among the plurality of layers.

Acoustic wave resonator and method for manufacturing the same

An acoustic wave device includes an acoustic wave generator formed on one surface of a substrate; a support member formed on the one surface of the substrate spaced apart from the acoustic wave generator; a protective member coupled to the support member and disposed to be spaced apart from the acoustic wave generator; and a sealing part encapsulating the protective member and the support member, wherein the sealing part includes one, or a plurality of, first hermetic layer(s) and one, or a plurality of, second hermetic layer(s), and the first hermetic layer(s) and the second hermetic layer(s) are alternately stacked.

Acoustic wave device and method of manufacturing the same

An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

Acoustic wave resonator and filter including the same

A wafer level package includes a wafer member having inner cavities in which circuit elements are disposed, element wall members disposed on an internal surface of the wafer member and enclosing element sections in which the circuit elements are disposed, and clearance wall members disposed on external surfaces of the element wall members and dividing a space between the element sections into clearance sections.

Wafer level package and method of manufacturing the same

In examples, there is provided a bulk acoustic wave resonator including a substrate; a resonating part including a first electrode, a piezoelectric layer, and a second electrode, laminated on an upper surface of the substrate, a cap bonded to the substrate by a bonding agent; and a sealing layer formed on an externally exposed surface of the bonding agent. This structure provides for a bulk acoustic wave resonator with improved reliability.

Bulk acoustic wave resonator and method for manufacturing the same

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.

Acoustic resonator and method of manufacturing the same

A bulk acoustic wave resonator including a substrate; an air cavity formed on the substrate; and a resonating part formed on the air cavity and comprising a first electrode, a piezoelectric layer, and a second electrode which are sequentially laminated, wherein a cross section of the air cavity has a short side, a long side opposing the short side, a first lateral side and a second lateral side connecting the short side and the long side to each other, the first and second lateral sides are inclined, and a surface roughness of the first electrode, the piezoelectric layer, the second electrode, or any combination thereof is between 1 nm and 100 nm.

Bulk acoustic wave resonator and filter including the same

A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

Bulk acoustic wave resonator having a frame spaced apart from an electrode

There are provided an acoustic resonator and a method of manufacturing the same. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator also includes a substrate disposed below the resonance part and including a via hole penetrating through the substrate and a connection conductor disposed in the via hole and connected to at least one of the first and second electrodes.

There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.

Disclosed herein is a method of manufacturing an inertial sensor. The method of manufacturing an inertial sensorincludes (A) applying a polymerto a base substrate, (B) patterning the polymerso as to form an opening partin the polymer, (C) completing a capby forming a cavityon the base substrateexposed fro the opening partthrough an etching process in a thickness direction, and (D) bonding the capto a device substrateby using a polymer, whereby the polymeris applied to the base substratein a constant thickness D, such that the capmay be easily bonded to the device substrateby using the polymer

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Suwon-si, South Korea

Yeong Gyu Lee