Samsung Display Co., Ltd.

Yeon-Taek Jeong

Bo-Sung Kim

Tae-Young Choi

Young-Min Kim

Kang-Moon Jo

Seon-Pil Jang

Doo-Na Kim

Doo-Hyoung Lee

Seung-Hwan Cho

Hi-Kuk Lee

Jun-Ho Song

Hyun-Jae Kim

Young-Soo Yoon

Bo Sung Kim

Ki-beom Lee

Masataka Kano

Hyun-Soo Lim

Eun-Hye Park

You-Seung Rim

Dong-Lim Kim

According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same

In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

Method of manufacturing a thin-film transistor, method of manufacturing a display substrate, and display substrate

Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.MAn &#x2003;&#x2003;(Formula 1)Herein, M is a metal ion, A is an organic ligand which includes &#x3b1;-substituted carboxylate, and n is a natural number.

Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

Thin film transistor array panel and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Yeon-Taek Jeong