Samsung Electronics Co., Ltd.

Yeon-Jin Gil

Sang-Jine Park

Yong-Sun Ko

Yong-Jhin Cho

Byung-Kwon Cho

Bo-un Yoon

Kun-Tack Lee

Ji-Hoon Jeong

Ha-Young Jeon

Won-Sang Choi

Ji-Won Yun

Young-Hoo Kim

Kwang-Wook Lee

Sang-jine Park

Young-hoo Kim

A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

Process chamber for a supercritical process and apparatus for treating substrates having the same

Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.

Semiconductor devices including an isolation layer on a fin and methods of forming semiconductor devices including an isolation layer on a fin

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Daegu, South Korea

Yeon-Jin Gil