Samsung Electronics Co., Ltd.

Imagene Co., Ltd.

Yeon Hwa Lim

Sung Min Kim

Jae Myoung Lee

Jeong Lim Kim

Gyeongseop Kim

Heung Suk Oh

Myoung Ho Kang

Joong Won Jeon

Won Koo Lee

Chan Sun Park

Hyun J On Ha

A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

Semiconductor device having a plurality of fins and method of fabricating the same

Semiconductor device having first and second fin-type patterns and method of fabricating the same

This invention relates to compounds of Formula I having an aziridine-2-carboxylic group and a menthol group, a process for preparing such compounds, a method for obtaining optically active aziridine-2-carboxylate derivatives by optical resolution of such compounds, and optically active aziridine-2-carboxylate derivatives obtained by the same method: 

Optically active aziridine-2-carboxylate derivatives and a process for preparing them

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Seoul, South Korea

Yeon Hwa Lim