Samsung Electronics Co., Ltd.

Yeon-Ho Park

Sung-Dae Suk

Sunhom Steve Paak

Dong-Ho Cha

Kyung-Soo Kim

Nak-jin Son

Wook-hyun Kwon

Seon-Ah Nam

Gi-bong Lee

Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

Semiconductor devices and methods of manufacturing the same

Semiconductor devices

A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and second hard mask layers over the active fins, forming a first hard mask pattern by etching the second hard mask layer, trimming the first hard mask pattern to form a trimmed hard mask pattern, forming a first photo resist pattern over the first hard mask layer, forming second hard mask patterns by etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask, and forming active fin patterns by etching the active fins by using the second hard mask patterns as an etching mask.

Method of manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Yeon-Ho Park