Samsung Electronics Co., Ltd.

Hyundai Mobis Co., Ltd.

Harbin Institute of Technology

Yeon-Ho Kim

Jong-Hwa Kim

Young-Joon Choi

Seok-Cheon Kwon

Kyeong-Han Lee

In-Young Kim

Yun-ho Choi

Jae-hyuck Woo

Keon Lee

Joon-kee Cho

Ji-Hoon Lim

Min-Ji Park

Seok-Won Bang

Bing-Rong Hong

Rong-Hua Luo

Mao-Hai Li

An integrated circuit test apparatus includes: a first test unit configured to output a current for a built-in self test (BIST) progress state for each internal circuit of an integrated circuit in a BIST test mode and to determine whether each internal circuit operates normally in a wake-up mode of the integrated circuit; and a first determination module configured to determine whether each internal circuit is in a stuck state based on a change detected by the first test unit.

Integrated circuit test apparatus

A flash memory device includes a memory cell array, a clock signal input, an input for receiving a signal designating a writing operating mode, a plurality of data input/output pads, and a data input/output buffer circuit that is electrically connected to the clock signal input and to the plurality of data input/output pads. The data input/output buffer circuit is configured to receive data that is to be written to the memory cell array through the data input/output pads in synchronization with a clock signal that is applied to the clock signal input in response to activation of the signal designating the writing operating mode.

Flash memory devices with high data transmission rates and memory systems including such flash memory devices

Growing community of inventors

Seoul, South Korea

Yeon-Ho Kim