Samsung Electronics Co., Ltd.

Yeon-Hee Kim

Xianyu Wenxu

Chang-Soo Lee

Jung-hyun Lee

Kyung Bae Park

Chul Joon Heo

Yong-young Park

Chang-youl Moon

Takkyun Ro

Dong-joon Ma

Ryuichi Satoh

Chui Joon Heo

Takao Motoyama

Se Hyuck Park

An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.

Electronic devices and methods of manufacturing the same

A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate

Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

Non-volatile memory device including dummy electrodes and method of fabricating the same

Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga&#x2014;In&#x2014;Zn&#x2014;O film on a substrate, forming a mask layer covering a portion of the Ga&#x2014;In&#x2014;Zn&#x2014;O film, and etching the Ga&#x2014;In&#x2014;Zn&#x2014;O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CH) and Hgas. The chlorine gas may be, for example, Cl, BCl, and/or CCl, and the alkane gas may be, for example, CH.

Thin film etching method

Growing community of inventors

Seoul, South Korea

Yeon-Hee Kim