Samsung Electronics Co., Ltd.

Yeon-Ha Cho

Joon-Ho Lee

Jae-Im Yun

Seok-Ho Go

An apparatus and a method for interlocking power to ion implantation equipment. The apparatus may include a positive and a negative power supply which generates a positive voltage and a negative voltage respectively, a comparator which compares the positive voltage and the negative voltage, and a signal generating unit which generates an interlocking signal which interlocks the positive and negative power supplies when a sum of a first relative value of the positive voltage and a second relative value of the negative voltage does not equal zero. The apparatus may further include a switching unit which changes a mode of the positive and negative power supplies from a remote mode to a local mode when the sum of the relative values does not equal zero. The switching unit may be a relay switch. Power output lines may connect the positive and negative power sources to a lens assembly unit.

Apparatus and method for interlocking a power supply to ion implantation equipment, method and apparatus for generating an interlocking signal, method and apparatus for interrupting an ion implantation process, and an interlocking system

An apparatus for aligning a wafer is provided, which normally senses a flat zone of the wafer by sensors regardless of an external light so that the wafer is aligned in a set mode, in order to increase or maximize production yield. A body has all kinds of drivers. An orient chuck is provided to protrude to an upper portion of the body for rotating the wafer; a guide plate ascending and descending to slide a circumference surface of the wafer so that a center of the wafer is located on the orient chuck. A plurality of sensors sense a flat zone of the wafer being rotated on the orient chuck. A wafer carrier cassette is formed at an upper portion of the orient chuck in order to load the wafer aligned in one direction by the sensors and the orient chuck, and is supported by a plurality of frames formed at respective corners of the body. A panel wall encloses a circumference of the frame at peripheries of the orient chuck and sensors between the wafer carrier cassette and the body, and intercepts an external light to be incident to the sensors.

System to determine proper wafer alignment

A high-energy ion implanter monitors the recycling of a charge exchanging gas that is supplied to a stripper of a tandem accelerator. When the charge exchanging gas leaks out from the stripper and then flows into both energy boxes adjacent the tandem accelerator, gas sensors in the energy boxes measure the amount of the charge exchanging gas and send corresponding data to a controller. The controller compares the measured data with a standard data on the charge exchanging gas. When the measured data is different from the standard data, a pre-established interlocking system breaks off the operation of the implanter.

High-energy ion implanter and method of operation thereof

An ion implantation apparatus for use in manufacturing semiconductors includes a loopback device connected to a bias ring for a Faraday cup. The loopback device detects whether a current flows through the bias ring and generates an interlock signal to be supplied through an interface to a controller. In response to the interlock signal, the controller stops an implantation operation of the apparatus, and a driver circuit drives a warning device in response to the interlock signal.

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Gyeonggi-do, South Korea

Yeon-Ha Cho