Samsung Mobile Display Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Kobe Steel, Ltd.

Yeon Gon Mo

Jae Kyeong Jeong

Hyun Soo Shin

Tae Woong Kim

Jae Bon Koo

Se Yeoul Kwon

Hyun Woo Koo

Jeong Ho Kim

Jin Hwan Choi

Jung Hun Lee

Sun Ho Kim

Je Hun Lee

Tae An Seo

Ki Hyun Kim

Kyu Young Kim

Keum Nam Kim

Yeon Hong Kim

Dong Un Jin

Sung Jin Kim

Gun Hee Kim

Toshihiro Kugimiya

Min Kyu Kim

Young-Seok Seo

Byung Du Ahn

Aya Miki

Hiroshi Goto

Kyoung Won Lee

Shinya Morita

Ki Ju Im

Ji Hun Lim

Khachatryan Hayk

Kwang Suk Kim

Dan Bi Choi

Hun Jung Lee

Jong Han Jeong

Seo Yeoul Kwon

Display device

A flexible organic light-emitting diode display and a method of manufacturing the same are disclosed. In one aspect, the display includes a substrate formed of a first material including a metal and an OLED formed over the substrate.

Flexible organic light-emitting diode display and method of manufacturing the same

Disclosed herein is a flexible display device, including: a substrate that comprises a first surface and a second surface which is an opposite surface to the first surface; a light-emitting device disposed on the first surface; a reduction layer disposed on the second surface; and a barrier layer disposed between the second surface and the reduction layer.

Flexible display device and manufacturing method thereof

The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor

A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a pixel electrode. The third control electrode is formed on the etch stop layer. The passivation layer is formed on the first electrode, the first output electrode and the third control electrode. The pixel electrode is formed on the passivation layer and connects to the first output electrode.

Display device and manufacturing method thereof

A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.

Flat panel display and method for driving the same

A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

Static electricity preventing assembly for display device and method of manufacturing the same

A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.

Thin film transistor and method of manufacturing the same

A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining layer may reduce and/or prevent a reduction in a melt duration time of amorphous silicon during a crystallization process for forming a polysilicon layer of the TFT.

Polysilicon thin film transistor and method of fabricating the same

A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.

An Organic Light Emitting Display (OLED) and its method of fabrication includes: a transparent substrate; a photochromatic layer formed on a first surface of the transparent substrate; at least one transparent Thin Film Transistor (TFT) formed on a first surface of the transparent substrate, and an organic light emitting device formed on and electrically connected to the transparent TFT.

Organic light emitting display (OLED) and its method of fabrication

A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.

Thin film transistor and the manufacturing method thereof

An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

Organic light emitting display device

The flat panel display includes an electrochromic device that is a controlling unit. The electrochromic device reversibly makes electrolytic oxidizing and reducing reactions so that coloring and decoloring can be made reversibly, when voltage is applied. With such the construction, the flat panel display controls the voltage applied to the electrochromic device, enabling to selectively display an image on front side or two sides.

Flat panel display and a method of driving the same

Growing community of inventors

Yongin-si, South Korea

Yeon Gon Mo