Samsung Electronics Co., Ltd.

Yeon Cheol Heo

Dong Hun Lee

Mirco Cantoro

Jae Hwan Lee

Jung Han Lee

Sang Su Kim

Hyung Suk Lee

Tae Yong Kwon

Yun Il Lee

Chang Jae Yang

Chang Min Yoe

Byoung Gi Kim

Seung Chan Yun

Sang Hyuk Hong

Hwan Wook Choi

A semiconductor device includes a substrate having a first region and a second region; a first nanowire in the first region in a direction perpendicular to an upper surface of the substrate; a second nanowire in the second region in a direction perpendicular to the upper surface of the substrate and having a height less than that of the first nanowire; first source/drain regions at top portion and bottom portion of the first nanowire; second source/drain regions at top portion and bottom portion of the second nanowire; a first gate electrode surrounding the first nanowire between the first source/drain regions; and a second gate electrode surrounding the second nanowire between the second source/drain regions.

Semiconductor device including vertical channel

Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering the channel layer and intersecting the active fins, sidewall spacers disposed on both sidewalls of the gate structure, and capping layers disposed to contact lower surfaces of the sidewall spacers and having a width substantially the same as a width of the lower surfaces of the sidewall spacers.

Semiconductor device having strained channel layer and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Yeon Cheol Heo