Samsung Electronics Co., Ltd.

Yeol Jon

Chung-Ki Min

Yong-Sun Ko

Kyung-Hyun Kim

Joon-Sang Park

Dong-keun Kim

Tae-eun Kim

Chang-sun Hwang

A chemical-mechanical polishing (CMP) method of polishing a phase-change material and a method of fabricating a phase-change memory, the CMP method including forming the phase-change material on an activation surface of a semiconductor wafer, and performing a CMP process on the phase-change material using a polishing pad, wherein the performing the CMP process includes reducing a change in the composition of the phase-change material by adjusting, within a predetermined range, a temperature of a region where the semiconductor wafer and the polishing pad contact each other.

Chemical-mechanical polishing method for polishing phase-change material and method of fabricating phase-change memory device using the same

Provided is a semiconductor device including a vertically oriented capacitor extending above the substrate surface and a method of manufacturing such devices in which cell, peripheral and boundary areas between the cell and peripheral areas are defined on a semiconductor substrate. Capacitors are formed in the cell area, a mold pattern is provided in the peripheral areas and an elongated dummy pattern is provided in the boundary areas. The dummy pattern includes a boundary opening in which a thin layer is formed on the elongated inner sidewalls and on the exposed portion of the substrate during formation of the lower electrode. A mold pattern and lower electrode structures having substantially the same height are then formed area so that subsequent insulation interlayer(s) exhibit a generally planar surface, i.e., have no significant step difference between the cell areas and the peripheral areas.

Semiconductor device and method of manufacturing the same

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Yongin-si, South Korea

Yeol Jon