Samsung Electronics Co., Ltd.

Yeojin Lee

Sangjin Kim

Hyunjae Kang

Kwangsub Yoon

Tae Sun Kim

Yura Kim

Jaekyung Seo

In some embodiments, a method of manufacturing an integrated circuit device includes forming a feature structure on a substrate, forming a first hardmask configured to cover the feature structure, forming, on the first hardmask, a second hardmask comprising a plurality of first line portions extending lengthwise in a first horizontal direction and being apart from each other in a second horizontal direction perpendicular to the first horizontal direction, forming, on at least one of the first hardmask and the second hardmask, an etch mask pattern comprising a plurality of second line portions, forming, from the first hardmask, a first hardmask pattern comprising a plurality of third line portions, forming, from the second hardmask, a plurality of second hardmask patterns, and forming a feature pattern comprising a plurality of fourth line portions by etching the feature structure and using the plurality of second hardmask patterns and the first hardmask pattern.

Method of manufacturing integrated circuit device

The method may include forming a plurality of fins on a substrate with first and second regions, forming a photoresist pattern to expose the fins of the first region, forming a material layer to cover the fins of first region and the photoresist pattern, chemically reacting the photoresist pattern the material layer to form a supplemental film on a side surface of the photoresist pattern, performing an ion implantation process using the photoresist pattern and the supplemental film as a ion injection mask to form impurity layers in the fins of the first region.

Method of fabricating semiconductor device

Growing community of inventors

Seoul, South Korea

Yeojin Lee