Intel Corporation

Actel Corporation, Inc.

Yeochung Yen

Simon Yang

Melton C Bost

Jim Baldo

Barbara Greenebaum

Steve S Chiang

Abdul R Forouhi

Wenn-Jei Chen

A static-charge protection device for an antifuse includes an additional second-sized aperture smaller in area than the antifuse apertures disposed in the same inter-electrode dielectric layer. Antifuse material is disposed in the second-sized aperture, and the upper electrode extends over the second aperture as well as the first aperture. A preferred process for fabricating the protection device utilizes the step of forming the smaller apertures and forming their antifuse material layers simultaneously with forming the antifuse apertures. A static-charge protection device for an antifuse device includes an additional second-sized aperture larger in area than the first-sized antifuse apertures. Metal plug material is deposited and etched back. A layer of amorphous silicon antifuse material is formed and defined over the first and second sized apertures, the portion formed over the larger partially filled antifuse protection device cell being thinner.

Circuits for ESD Protection of metal to-metal antifuses during processing

A tri-layer titanium coating for an aluminum layer of a semiconductor device. An aluminum layer used for interconnecting individual devices of an integrated circuit is formed on a semiconductor material. A first titanium nitride layer is deposited on the aluminum layer. A titanium layer is deposited on the first titanium nitride layer. A second titanium nitride layer is then deposited on the titanium layer. The tri-layer titanium coating prevents the formation of Al.sub.2 O.sub.3 and AIF.sub.3 during the etching of a via hole in an intermetal dielectric layer deposited above the second titanium nitride layer.

Tri-layer titanium coating for an aluminum layer of a semiconductor

A tri-layer titanium coating for an aluminum layer of a semiconductor device. An aluminum layer used for interconnecting individual devices of an integrated circuit is formed on a semiconductor material. A first titanium nitride layer is deposited on the aluminum layer. A titanium layer is deposited on the first titanium nitride layer. A second titanium nitride layer is then deposited on the titanium layer. The tri-layer titanium coating prevents the formation of Al.sub.2 O.sub.3 and AlF.sub.3 during the etching of a via hole in an intermetal dielectric layer deposited above the second titanium nitride layer.

Process of forming a tri-layer titanium coating for an aluminum layer of

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San Jose, CA, United States of America

Yeochung Yen