Kuprion Inc.

Nanyang Technological University

Agency for Science, Technology and Research

Lockheed Martin Corporation

Yeng Ming Lam

Alfred A Zinn

Chee Lip Gan

Pooi See Lee

Byung Hoon Lee

Lixin Song

Zhenggang Li

Jaewon Kim

Ebinazar Benjamin Namdas

G Subodh Mhaisalkar

Zhikuan Chen

Wei Lin Leong

Tommy Cahyadi

According to embodiments of the present invention, an ink composition is provided. The ink composition includes a plurality of nanostructures distributed in at least two cross-sectional dimension ranges, wherein each nanostructure of the plurality of nanostructures is free of a cross-sectional dimension of more than 200 nm. According to further embodiments of the present invention, a method for forming a conductive member and a conductive device are also provided.

Ink composition, method for forming a conductive member, and conductive device

According to embodiments of the present invention, a method of interconnecting nanowires is provided. The method includes providing a plurality of nanowires, providing a plurality of nanoparticles, and fusing the plurality of nanoparticles to the plurality of nanowires to interconnect the plurality of nanowires to each other via the plurality of nanoparticles. According to further embodiments of the present invention, a nanowire network and a transparent conductive electrode are also provided.

Method of interconnecting nanowires, nanowire network and transparent conductive electrode

Method of interconnecting nanowires and transparent conductive electrode

An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

Organic memory device with a charge storage layer and method of manufacture

A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60&#xb0; C. to 225&#xb0; C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.

Solution-processed inorganic films for organic thin film transistors

Growing community of inventors

Singapore, Singapore

Yeng Ming Lam