Playnitride Display Co., Ltd.

Yen-Yeh Chen

Chih-Ling Wu

Yi-Min Su

Yi-Chun Shih

Sheng-Yuan Sun

Yu-Yun Lo

Tzu-Yang Lin

Bo-Wei Wu

Shiang-Ning Yang

Po-Wei Chiu

Loganathan Murugan

Yung-Chi Chu

Yu-Ya Peng

Ying-Ting Lin

Kuo-Wei Chen

Yu-Jui Tseng

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and at least one first air gap is provided. The substrate has a plurality of connection pads. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the substrate and each of the micro light emitting devices. The at least one first air gap is disposed between the substrate and a surface of the isolation layer facing the substrate.

Micro light emitting device display apparatus

A micro LED display device includes an epitaxial structure layer, a connection layer, a light conversion layer and a transparent layer. The epitaxial structure layer includes a plurality of micro LEDs disposed apart from each other. The connection layer is disposed at one side of the epitaxial structure layer away from the micro LEDs. The light conversion layer is fixed on the epitaxial structure layer through the connection layer and includes a plurality of light conversion portions. Each of the light conversion portions corresponds to one of the micro LEDs. The transparent layer is disposed at one side of the light conversion layer away from the epitaxial structure layer. The ratio of the thickness of the transparent layer to the width of each light conversion portion is between 0.1 and 40. A manufacturing method of the micro LED display device is also provided.

Micro light-emitting diode display device and manufacturing method thereof

A micro LED display device includes a circuit substrate, an epitaxial structure layer, a metal conductive layer, a light conversion layer and a light-shielding structure. The epitaxial structure layer includes a first surface, a second surface, and a plurality of micro LED units separated from each other. The micro LED units are electrically connected to the circuit substrate. The metal conductive layer is disposed on the second surface and directly contacts the epitaxial structure layer, and has a plurality of light conversion region each corresponds to one of the micro LED units. The light conversion layer is disposed in a part of the light conversion regions. The light-shielding structure does not cover the light conversion regions. In the direction perpendicular to a bonding surface of the circuit substrate, the thickness of the metal conductive layer is greater than that of the epitaxial structure layer.

Micro light-emitting diode display device

A micro light-emitting diode package structure including a first base layer, a second base layer and a display unit is provided. The second base layer is disposed on the first base layer and has an opening. The opening exposes a part of the first base layer, and the opening and the exposed first base layer define a containing groove. The display unit is disposed in the containing groove, and the display unit includes a control circuit board and a micro light-emitting diode assembly. The micro light-emitting diode assembly is disposed on the control circuit board and electrically connected to the control circuit board.

Micro light-emitting diode package structure and micro light-emitting diode display apparatus

An LED micro display device includes a circuit substrate, micro light-emitting elements, an insulating layer, and a common electrode layer. The circuit substrate has conductive patterns. The micro light-emitting elements are bonded to the circuit substrate and disposed corresponding to the conductive patterns. Each micro light-emitting element has a bottom surface, a top surface and a side wall. The bottom surface connects to the corresponding conductive pattern. The side wall has a first sidewall portion adjacent to the circuit substrate and a second sidewall portion connected to the first sidewall portion. The insulating layer is disposed on the circuit substrate, covers first sidewall portions, and exposes second sidewall portions. The common electrode layer covers the insulating layer and second sidewall portions. The common electrode layer is electrically connected to the micro light-emitting elements, contacts the second sidewall portions, and exposes the top surfaces.

Light-emitting diode micro display device

A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer. The top surfaces of the semiconductor light-emitting mesas respectively form a plurality of second bonding surfaces adjacent to the second bonding metal layers, and the first bonding surface and the second bonding surfaces are coplanar.

Micro light-emitting diode display

A micro light-emitting diode display panel includes a substrate, a plurality of pixel structures, and a plurality of wavelength conversion structures. The pixel structures are disposed on the substrate. Each pixel structure includes a plurality of micro light-emitting diodes. The micro light-emitting diodes are formed by a plurality of different portions of a connected epitaxial structure. The wavelength conversion structures are disposed in the epitaxial structure and are respectively aligned with at least a portion of the micro light-emitting diodes.

Micro light-emitting diode display panel

A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.

A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Micro light emitting diode and micro light emitting diode device substrate

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and an air gap is provided. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the micro light emitting devices. The air gap is disposed between the micro light emitting devices, the isolation layer, and the substrate.

A micro light-emitting diode display, including at least one first type semiconductor base layer, a plurality of semiconductor light-emitting mesas, and a conducting layer, is provided. The plurality of semiconductor light-emitting mesas are dispersedly disposed on the at least one first type semiconductor base layer. The at least one first type semiconductor base layer has a surface exposed by the semiconductor light-emitting mesas. The conducting layer is disposed on the surface of the at least one first type semiconductor base layer and is in an interlaced distribution configuration with the semiconductor light-emitting mesas. The ratio of the area of the conducting layer in contact with the surface to the area of the surface is greater than or equal to 0.2.

An alignment structure is provided. The alignment structure includes a substrate, an alignment portion, and an extension portion. The alignment portion is disposed on the substrate. The extension portion is disposed on the substrate. The extension portion at least partially surrounds the alignment portion and is spaced apart from the alignment portion by a void. A side of the extension portion adjacent to the alignment portion and a side of the alignment portion adjacent to the extension portion are conformal to each other.

Growing community of inventors

Miaoli County, Taiwan

Yen-Yeh Chen