United Microelectronics Corp.

Tsinghua University

Faraday Technology Corporation

Yen-Yao Wang

Meng-Fan Chang

Hsin-Wen Chen

Chi-Chang Shuai

Hiroyuki Yamauchi

Chien-Fu Chen

Zih-Yu Chiu

Yi-Hsin Tseng

A content addressable memory (CAM) and a CAM cell are provided. The CAM includes a memory cell array and a disabling circuit. The memory cell array includes a plurality of CAM cells, wherein each of the CAM cells includes a memory cell circuit and a comparison circuit. When the CAM cells in a first column of the memory cell array are normal, the disabling circuit enables the comparison circuits of the CAM cells in the first column, so that the comparison circuits in the first column respectively present the comparison results on different match lines. When any one of the CAM cells in the first column is defective, the disabling circuit disables the comparison circuits of the CAM cells in the first column, so that the disabled comparison circuits does not affect the different match lines.

Content addressable memory and content addressable memory cell

A cell of a content-addressable memory (CAM) has a first switch, a second switch and a storage unit. A first end of the first switch and a first end of the second switch are coupled to a matchline. The first switch is controlled by a first search signal, and the second switch is controlled by a second search signal. The second search signal is complementary to the first search signal. The storage unit has a first inverter and a second inverter. The first inverter has a first latch node coupled to a second end of the first switch. The second inverter is cross-coupled to the first inverter and has a second latch node coupled to a second end of the second switch.

Content-addressable memory having six-transistor content-addressable memory cells

A 6T static random access memory cell, array, and memory thereof are provided, in which the memory cell includes a first inverter, a second inverter, a first access transistor, and a second access transistor. A first high supply voltage and a low supply voltage are coupled to the first inverter. A second high supply voltage and the low supply voltage are coupled to the second inverter. The first access transistor has a gate terminal coupled to a first word line. The first access transistor has a source terminal coupled to the first node. The second access transistor has a gate terminal coupled to a second word line, and the second access transistor has a source terminal coupled to the second node. The first word line provides ON signals to turn on the first access transistor, and the second high supply voltage provides a first differential voltage simultaneously.

6T static random access memory cell, array and memory thereof

Growing community of inventors

Hsinchu, Taiwan

Yen-Yao Wang