Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Ta Lin

Kuo-Feng Yu

Jian-Hao Chen

Hui-Chi Chen

Chia-Wei Chen

Ming-Chi Huang

Yung-Hsiang Chan

Chih-Ming Sun

Yen-Ju Chen

An-Hung Tai

Cheng-Chieh Tu

Yun-chen Wu

Jui Fu Chueh

Wen-Yao Yang

Te-Fu Yeh

A method for forming a semiconductor device structure includes forming first nanostructures and second nanostructures over a substrate. The method also includes forming a first metal gate layer surrounding the first nanostructures and over the first nanostructures and the second nanostructures. The method also includes etching back the first metal gate layer over the first nanostructures and the second nanostructures. The method also includes removing the first metal gate layer over the second nanostructures. The method also includes forming a second metal gate layer surrounding the second nanostructures and over the first nanostructures and the second nanostructures.

Semiconductor device structure and method for forming the semiconductor device structure

In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode formed over a channel region, a first gate dielectric layer is formed over the channel region in the gate space, a second gate dielectric layer is formed over the first gate dielectric layer, one or more conductive layers is formed on the second gate dielectric layer, the second gate dielectric layer and the one or more conductive layers are recessed, an annealing operation is performed to diffuse an element of the second gate dielectric layer into the first gate dielectric layer, and one or more metal layers are formed in the gate space.

Method of manufacturing semiconductor devices and semiconductor devices

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Taipei, Taiwan

Yen-Ta Lin