General Electric Company

Yen Sheng Sun

Dominic A Cusano

James A Loughran

High speed semiconductor rectifiers are fabricated by providing a rectifier, increasing the temperature thereof to a relatively high value, irradiating the rectifier with high energy lattice-damage causing particles while maintaining the relatively high temperature, and annealing the irradiated rectifier at a temperature and for a time sufficient to decrease the leakage current of the rectifier to a low value without substantially increasing the reverse recovery time of the rectifier.

Method of controlling leakage currents and reverse recovery time of

Disclosed is a double side cooled, pressure mounted semiconductor package and a method for the manufacture thereof. The package is formed by directly bonding upper and lower metal contact assemblies to an annular ceramic housing. Assembly is simplified if at least one contact assembly comprises two parts applied sequentially. An annular flange having a central opening approximately the size of the central opening in the annular housing and having an outside diameter larger than the outside diameter of the ceramic housing is direct bonded to one end of the housing simultaneously with a lower semiconductor contact. After a conventional semiconductor pellet is positioned in the housing, the second part, a metal contact disc with an outside diameter approximately equaling the outside diameter of the flange, is positioned thereover. Finally, the flange and the disc are welded around their peripheries.

Double side cooled, pressure mounted semiconductor package and process

Disclosed is a method of manufacturing semiconductor devices including a step of irradiating the devices to alter the turnoff and forward drop characteristics thereof. The irradiation is carried out at a temperature above 100.degree. C, and preferably in the range of 150.degree. to 375.degree. C. No post irradiation annealing step is required.

Method of manufacturing semiconductor devices

Disclosed is a method of bonding metals to substrates such as ceramics or metals. A bonding agent forms a eutectic alloy with the metal to provide bonding. Several methods of supplying the bonding agent to the system are disclosed. However, regardless of which method of introducing the bonding agent into the system is employed, the quantity of the bonding agent is carefully controlled so that the compound in the region of the bond is hypoeutectic. To form the bond, the metal and the substrate are placed adjacent each other and the bonding agent is introduced into the system. The system is then heated to a temperature between the eutectic temperature and the melting point of the metal for a preselected time. The system is then cooled to form a bond. The heating is carried out in an inert atmosphere or a vacuum.

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Liverpool, NY, United States of America

Yen Sheng Sun