Playnitride Inc.

Genesis Photonics Inc.

Yen-Lin Lai

Jyun-De Wu

Yu-Chu Li

Shen-Jie Wang

Kuan-Yung Liao

Yun-Li Li

Chih-Ling Wu

Ching-Liang Lin

Chien-Chih Yen

Yu-Lien Yang

A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 10atoms/cmor between 10atoms/cmand 10atoms/cm. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 10atoms/cm.

Light emitting device

A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.

Patterned substrate and light emitting diode wafer

A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5&#xd7;10cmwhile a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Nitride semiconductor structure and semiconductor light emitting device including the same

A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.

Semiconductor laser device

A semiconductor light-emitting device including a light-emitting layer, a first N-type waveguide layer and a plurality of semiconductor layers is provided. The light light-emitting layer has a first side and a second side opposite to the first side. The first N-type waveguide layer is disposed at the first side, and the semiconductor layers are disposed at the second side. The semiconductor layers include at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer.

Semiconductor light-emitting device

A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is AlInGaN, and 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;x+y&#x2266;1.

An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.

Epitaxy base, semiconductor light emitting device and manufacturing methods thereof

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlInGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;x+y&#x3c;1) while the well layer is made of InGaN (0&#x3c;z&#x3c;1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

A light emitting module including a driving unit and a light emitting diode is provided. The light emitting diode is electrically connected to the driving unit and the driving unit provides an operating current to make the light emitting diode emit light. The light emitting diode includes an n-type semiconductor layer, a light-emitting layer, an electron-blocking layer, and a p-type semiconductor layer. The electron-blocking layer has a thickness, and the thickness is smaller than or equal to 30 nm or is larger than or equal to 80 nm. The light-emitting layer is located between the electron-blocking layer and the n-type semiconductor layer. The electron-blocking layer is located between the p-type semiconductor layer and the light-emitting layer. A ratio of current density of the light emitting diode to the thickness is larger than 0 and is smaller than or equal to 2.

Light emitting module

An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask layer. The first buffer layer is disposed on the epitaxial substrate. The first pattern mask layer is disposed on the first buffer layer. The second buffer layer is disposed on the first pattern mask layer and a part of the first buffer layer. The second pattern mask layer is disposed on the second buffer layer. A projection of the first pattern mask layer projected on the first buffer layer and a projection of the second pattern mask layer projected on the first buffer layer cover at least 70% of the total area of the first buffer layer.

Epitaxial structure with pattern mask layers for multi-layer epitaxial buffer layer growth

An epitaxy base adapted to form a light-emitting device on is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer.

Epitaxy base and light-emitting device

A nitride semiconductor structure including a substrate, a first type nitride semiconductor layer disposed on the substrate, an active layer disposed between the substrate and the first type nitride semiconductor layer and a second type nitride semiconductor layer disposed between the substrate and the active layer is provided. The active layer includes a first multiple quantum well structure including a plurality of first quantum well layers and a plurality of first barrier layers staggered with each other, and a second multiple quantum well structure including a plurality of second quantum well layers and a plurality of second barrier layers staggered with each other. A second type dopant is doped into at least one of the second barrier layers, and a concentration of the second dopant in the second barrier layer is higher than that of the second dopant in the second type nitride semiconductor layer.

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Tainan, Taiwan

Yen-Lin Lai