Taiwan Semiconductor Manufacturing Comp. Ltd.

Orise Technology Co., Ltd.

Focaltech Systems Co., Ltd.

Mediatek Corporation

National Taiwan University

Yen-Lin Huang

Chien-Min Lee

Shy-Jay Lin

Mingyuan Song

Hsin-Hao Wang

Tung Ying Lee

Hsiang-Hui Chang

Hiroki Noguchi

Ming-Yuan Song

William J Gallagher

Chih-Hung Kung

Chien-Ying Huang

Tung-Ying Lee

William Joseph Gallagher

Thomas Edward Pare, Jr

Xinyu Bao

Gary Allen Anwyl

Hung-Tao Hsieh

Hsin-Mao Huang

Chia-Jung Chang

Kuei-Kai Chang

Lin-Chien Chen

Jr-I Lee

Yen-Tso Chen

Ming-Chien Li

Yu-Fang Chiu

Cheng-Wei Peng

Chen-Yu Hu

Ying-Che Hsu

Chao-Chung Huang

Kuan-Hao Chen

Chia-Chin Tsai

Chi-Feng Pai

Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

Semiconductor device and manufacturing method of semiconductor device

A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

Semiconductor device and method for forming the same

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Memory device and manufacturing method thereof

A memory device is provided. The memory device includes a substrate, a spin-orbit torque layer and a magnetic tunneling junction (MTJ). The MTJ stacks with the spin-orbit torque layer over the substrate and includes a synthetic free layer, a barrier layer and a reference layer. The synthetic free layer includes a synthetic antiferromagnetic structure, a first spacer layer and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin-orbit torque layer and the free layer. The barrier layer is disposed beside the synthetic free layer. The reference layer is disposed beside the barrier layer.

Memory device

Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Memory device, method of forming the same, and memory array

An active one-layer multi-touch sensor panel device includes a one-layer multi-touch sensor panel, a die of touch controller IC, and a flexible printed circuit board. The one-layer multi-touch sensor panel has a plurality of conductive lines for forming a plurality of touch sensing areas thereon. The die of touch controller IC is bonded onto the one-layer multi-touch sensor panel by a chip-on-glass method. The die of touch controller IC is connected to the plurality of conductive lines to drive the plurality of conductive lines and receive sensing signals associated with the plurality of conductive lines for detecting touch positions on the one-layer multi-touch sensor panel. The flexible printed circuit board is electrically connected to the die of touch controller IC by the one-layer multi-touch sensor panel to transmit the sensing signals received.

Active one-layer multi-touch sensor panel device

An in-cell multi-touch display panel system includes a multi-touch LCD panel and a touch display control subsystem. The multi-touch LCD panel has a TFT layer, a detection electrode layer, and a common-voltage and touch-driving layer. The detection electrode layer has M first conductor lines for performing touch detection by sampling touch detection from the M first conductor lines. The common-voltage and touch-driving layer has N second conductor lines for receiving common voltage in display and touch-driving signal in touch detection. In the detection electrode layer, there are pluralities of detection electrode areas in the intersections of first conductor lines and second conductor lines. Each detection electrode area is connected to a first conductor line by a touch-control transistor. The M&#xd7;N touch-control transistors are divided in to N sets corresponding to N second conductor lines, respectively.

In-cell multi-touch display panel system

An in-cell multi-touch display panel system includes a touch LCD panel and a touch display control subsystem. The touch LCD panel has a TFT layer, a conductive electrode layer, and a common-voltage and touch-driving layer. The TFT layer has K gate driving lines and L source driving lines for a display operation. The conductive electrode layer has M first conduct lines for a touch detection operation by sampling a touch detection result from the M first conduct lines. The common-voltage and touch-driving layer has N second conduct lines for receiving a common voltage signal in display and receiving a touch-driving signal in touch detection. The K gate driving lines are divided into N groups respectively corresponding to the N second conduct line. When one group of gate driving lines has the display driving signal, the corresponding second conduct line is connected to the common voltage signal.

A method operative on a wireless transceiver device for performing beamforming calibration includes: measuring at least one joint signal response of at least one circuit loopback between a transmitter of the wireless transceiver device and a receiver of the wireless transceiver device to determine the measurement result; and calibrating joint signal path mismatch according to the measurement result for s multiple antenna beamforming system operating on the wireless transceiver device.

Scheme for performing beamforming calibration by measuring joint signal path mismatch

An in-cell multi-touch panel system includes: an in-cell touch display panel, a touch display control system. In a first frame time interval, the touch display control system drives the in-cell touch display panel and samples the sensing voltage from the in-cell touch display panel to determine whether there is an approaching external object and noise interference. In a second frame time interval, the touch display control system finds out a frequency with minimum noise for use as a frequency of the touch driving signal when the noise interference exists. In a third frame time interval, the touch display control system is based on the frequency with minimum noise to correspondingly generate the touch driving signal so as to determine whether there is an approaching external object.

In-cell multi-touch panel system with low noise and time division multiplexing and its driving method

A signal transmitting device includes: a signal processing circuit arranged to process an input signal to generate a processed input signal according to a compensating signal; a signal converting circuit arranged to convert the processed input signal to generate an output signal according to an oscillating signal; and an arithmetic circuit arranged to generate the compensating signal according to the power of a predetermined component in the output signal, wherein the signal processing circuit uses the compensating signal to update the input signal, and the signal converting circuit converts the updated input signal to reduce the power of the predetermined component in the output signal.

Signal transmitting device and signal transmitting method

In a method for increasing accuracy of touch coordinate calculation in a capacitive multi-touch system, it performs operations on obtained data for de-noising of the obtained data and increasing its linearity so as to generate data with excellent stability and linearity. An integral accumulation operation is performed to generate data for each sensing channel, cancel the accumulation error in data, and calculate coordinates for touch points on a capacitive touch panel.

Method for increasing accuracy of touch coordinate calculation in a capacitive multi-touch system

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Taipei, Taiwan

Yen-Lin Huang