Winbond Electronics Corporation

Yen-Jui Chu

Ming-Chih Tsai

Yu-Hsuan Ho

Chun-Hung Lin

Jin-Neng Wu

Ming-Hung Hsieh

Hsin-Hung Chou

Kao-Tsair Tsai

Chung-Hsien Liu

Tz-Hau Guo

A manufacturing method for a semiconductor structure is provided. First active areas, a second active area, and a third active area are formed. A first dielectric layer is formed on the active areas. A patterned region that includes a cavity region and a dielectric region is formed in the first dielectric layer, and the cavity region surrounds the dielectric region. A filling layer is formed in the cavity region. Multiple first contact holes and at least one second contact hole that penetrate the first dielectric layer are formed. Each first contact hole exposes a portion of the corresponding first active area, and the second contact hole replaces the dielectric region and exposes a portion of the second active area. Metal layers are filled in to the first contact holes and the second contact hole.

Semiconductor structure and manufacturing method of the same

Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.

Semiconductor device including uneven contact in passivation layer

Provided is a circuit structure including a substrate, a pad, a dielectric layer, a conductive layer, an adhesion layer, and a conductive bump. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The conductive layer contacts the pad and extends from the pad to cover a top surface of the dielectric layer. The adhesion layer is disposed between the dielectric layer and the conductive layer. The conductive bump extends in an upward manner from a top surface of the conductive layer. The conductive bump and the conductive layer are integrally formed. A method of manufacturing the circuit structure is also provided.

Method of manufacturing circuit structure

A package structure including a lead frame structure, a die, an adhesive layer, and at least one three-dimensional (3D) printing conductive wire is provided. The lead frame structure includes a carrier and a lead frame. The carrier has a recess. The lead frame is disposed on the carrier. The die is disposed in the recess. The die includes at least one pad. The adhesive layer is disposed between a bottom surface of the die and the carrier and between a sidewall of the die and the carrier. The 3D printing conductive wire is disposed on the lead frame, the adhesive layer, and the pad, and is electrically connected between the lead frame and the pad.

Package structure and manufacturing method thereof

Semiconductor device including uneven contact in passivation layer and method of manufacturing the same

A package structure and method of forming the same are provided. The package structure includes a die, a redistribution structure and a conductive pad. The redistribution structure is disposed on and electrically connected to the die. The redistribution structure includes a dielectric film, a conductive line, an adhesive layer and a conductive via. The dielectric film has a first surface and a second surface opposite to each other. The conductive line and the adhesive layer are located between the first surface of the dielectric film and the die. The conductive line is electrically connected to the die, and the adhesive layer laterally surrounds the conductive line. The conductive via penetrates through the dielectric film and the adhesive layer to electrically connect to the conductive line. The conductive pad is electrically connected to the die through the redistribution structure.

Package structure and method of forming the same

Provided is a redistribution layer (RDL) structure including a substrate, a pad, a dielectric layer, a self-aligned structure, a conductive layer, and a conductive connector. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The self-aligned structure is disposed on the dielectric layer. The conductive layer extends from the pad to conformally cover a surface of the self-aligned structure. The conductive connector is disposed on the self-aligned structure. A method of manufacturing the RDL structure is also provided.

Redistribution layer (RDL) structure and method of manufacturing the same

A sensing device for sensing ion concentration of a solution, including a first substrate, a second substrate, a sensing layer, and two electrodes. The material of the first substrate includes cellulose. The second substrate is located on the first substrate. The sensing layer is located on the second substrate. The two electrodes are separately disposed on the sensing layer to expose the sensing layer and bring a solution in contact with the sensing layer so as to measure the resistance value of the solution and convert the resistance value into the ion concentration of the solution.

Sensing device, nursing bra, and manufacturing method thereof

The present invention provides a patterned structure for an electronic device and a manufacturing method thereof. The patterned structure includes a patterned layer, a blocking structure, a cantilever structure, and a connection structure. The patterned layer is disposed on a substrate. The blocking structure is disposed on the substrate at one side of the patterned layer, wherein a thickness of the blocking structure is smaller than a thickness of the patterned layer. The cantilever structure is disposed on the substrate and located between the patterned layer and the blocking structure. The cantilever structure is connected with the patterned layer and the blocking structure. The connection structure is connected between the patterned layer and the substrate at one side of the patterned layer, and located on the cantilever structure and the blocking structure.

Patterned structure for electronic device and manufacturing method thereof

A reduction-oxidation sensor device and a manufacturing method thereof are provided. The reduction-oxidation sensor device includes a first electrode, at least one sensing structure and a second electrode. The first electrode is located on a substrate. The at least one sensing structure is located on the first electrode and the substrate. The at least one sensing structure includes a metal nanowire layer and a metal oxide layer. The metal nanowire layer is disposed on the first electrode and the substrate. The metal nanowire layer is wrapped by the metal oxide layer. The second electrode is located on the at least one sensing structure.

Reduction-oxidation sensor device and manufacturing method thereof

A semiconductor device is provided and includes a first pad and a second pad, a first conductive connector and a second conductive connector, a first conductive structure and a second conductive structure. The first conductive connector and the second conductive connector are disposed over the first pad and the second pad. The first conductive structure is electrically connected to the first pad and the first conductive connector, and includes a first portion, a second portion and a connecting portion connecting the first and second portions. The first portion and the second portion are not overlapped in a vertical direction, and the first portion, the connecting portion and the second portion are integrally formed. The second conductive structure is electrically connected to the second pad and the second conductive connector, wherein a portion of the second conductive structure is overlapped with the first conductive structure therebeneath in the vertical direction.

Semiconductor device including conductive structure

A gas detecting device configured to be attached to a surface includes a substrate, a semiconductor layer, a light-emitting component, a first electrode and a second electrode. The substrate includes a plurality of stacking layers stacked onto one another, and a material of the substrate includes cellulose nanofibrils (CNF). The substrate is formed by 3-D printing, such that a contact surface of the substrate is tightly attached to the surface. The semiconductor layer is formed on the substrate by 3-D printing. The light-emitting component is disposed on the substrate. The first electrode is coupled to the semiconductor layer and the light-emitting component. The second electrode is coupled to the semiconductor layer and a ground electrode. The first electrode and the second electrode are both disposed on the semiconductor layer and maintain a gap therebetween. A resistance of the semiconductor layer is changed according to a concentration of a designated gas.

Gas detecting device

A bone-conduction hearing aid device is provided. The bone-conduction hearing aid device is suitable for being attached to a body surface and includes a substrate, an input transducer, an amplifier, and a bone-conduction speaker. The substrate is composed of a plurality of stacking layers stacked on top of one another. A material of the substrate includes cellulose nanofiber. The substrate is formed by 3D printing technique so that a contact surface of the substrate is tightly attached with the body surface. The input transducer is disposed on the substrate and configured to receive a sound signal and convert the sound signal into an electric signal. The amplifier is disposed on the substrate and coupled to the input transducer to amplify the electric signal into an amplified electric signal. The bone-conduction speaker is disposed on the substrate and coupled to the amplifier to convert the amplified electric signal into a vibration signal.

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Taichung, Taiwan

Yen-Jui Chu