Taiwan Semiconductor Manufacturing Comp. Ltd.

Mitac Technology Corporation

Tsinghua University

Yen-Jen Chen

Chewn-Pu Jou

Huan-Neng Chen

Hsieh-Hung Hsieh

Feng Wei Kuo

Tzu-Jin Yeh

Shyh-An Chi

Wu-Chen Lin

I-Ting Lee

Meng-Sheng Chang

Fu-Lung Hsueh

Feng-Wei Kuo

Yu-Ling Lin

Hui Yu Lee

Yao-Jen Yang

Chien-Ying Chen

De-hui Wan

Hsuen-Li Chen

Sih-Wei Chang

Chi-Feng Huang

Chia-En Huang

Shen-Iuan Liu

Hsiao-Chun Lee

Kyle Yen

Chun-Hsing Li

Ying-Chun Chen

Ching-Wen Hwang

A thermal radiation heat dissipation device for an electronic component includes a heat dissipation substrate including a heat dissipation surface having a heat dissipation surface emissivity; and an emissivity modulation layer disposed on the heat dissipation surface including an emissivity modulation layer surface having an emissivity modulation layer surface emissivity. The emissivity modulation layer surface emissivity is greater the heat dissipation surface emissivity.

Thermal radiation heat dissipation device for electronic component and preparation method thereof

A testing system includes: a dividing circuit configured to receive a testing signal and provide a plurality of input signals according to the testing signal; and a plurality of integrated power-amplifiers coupled to the dividing circuit, each of the plurality of integrated power-amplifiers being configured to be tested by receiving a respective input signal of the plurality of input signals and generating a respective output signal for a predetermined testing time.

Power amplifiers testing system and related testing method

An integrated circuit includes a transistor formed in a semiconductor structure, a front-side horizontal conducting line in a first metal layer above the semiconductor structure, and a front-side vertical conducting line in a second metal layer above the first metal layer. The front-side horizontal conducting line is directly connected to a first terminal of the transistor, and the front-side vertical conducting line is directly connected to the front-side horizontal conducting line. In the integrated circuit, a front-side fuse element is conductively connected to the front-side vertical conducting line, and a backside conducting line is directly connected to a second terminal of the transistor. A word connection line extending in the first direction is directly connected to a gate terminal of the transistor.

Electrical fuse bit cell in integrated circuit having backside conducting lines

An IC includes a device-under-test (DUT) configured to receive a first AC signal at a first node and output a second AC signal at a second node, the second AC signal being based on the first AC signal, and first and second detection circuits. Each of the first and second detection circuits includes a first gain stage coupled to a corresponding one of the first or second nodes through a first capacitive device, a second gain stage in a cascade arrangement with the first gain stage, and a low-pass filter configured to generate a DC signal based on an output signal of the second gain stage.

Test circuit and method

A testing system includes: a dividing circuit configured to receive a testing signal and provide a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit, each of the plurality of power-amplifier chips being configured to be tested by receiving a respective input signal of the plurality of input signals and generating a respective output signal for a predetermined testing time.

An integrated circuit includes a front-side horizontal conducting line in a first metal layer, a front-side vertical conducting line in a second metal layer, a front-side fuse element, and a backside conducting line. The front-side horizontal conducting line is directly connected to the drain terminal-conductor of a transistor through a front-side terminal via-connector. The front-side vertical conducting line is directly connected to the front-side horizontal conducting line through a front-side metal-to-metal via-connector. The front-side fuse element having a first fuse terminal conductively connected to the front-side vertical conducting line. The backside conducting line is directly connected to the source terminal-conductor of the transistor through a backside terminal via-connector.

A composite heat dissipation device includes an electromagnetic radiation dissipation pile including a polar dielectric material assembly including a plurality of polar dielectric material units. The polar dielectric material assembly is configured to interact with solar radiation. Surfaces of the polar dielectric material units each are configured to interact with the solar radiation to generate scattering of light. The polar dielectric material units each include an optical phonon configured to interact with thermal radiation to increase strength of the thermal radiation.

Composite heat dissipation device and preparation method and applications thereof

An IC includes a plurality of pads at a top surface of a semiconductor wafer, an amplifier configured to receive a first AC signal at an input terminal, and output a second AC signal at an output terminal, a first detection circuit coupled to the input terminal and configured to output a first DC voltage to a first pad of the plurality of pads responsive to the first AC signal, and a second detection circuit coupled to the output terminal and configured to output a second DC voltage to a second pad of the plurality of pads responsive to the second AC signal.

A test circuit includes an oscillator configured to generate an oscillation signal, a device-under-test (DUT) configured to output an AC signal based on the oscillation signal, a first detection circuit configured to generate a first DC voltage having a first value based on the oscillation signal, and a second detection circuit configured to generate a second DC voltage having a second value based on the AC signal.

A testing system includes: a signal generator arranged to generate a testing signal; a dividing circuit coupled to the signal generator for providing a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit for being tested by generating a plurality of output signals for a predetermined testing time according to the plurality of input signals respectively.

A test circuit includes an amplifier configured to receive an AC signal, and output an amplified AC signal based on the AC signal, a first detection circuit configured to generate a first DC voltage having a first value based on an amplitude of the AC signal, and a second detection circuit configured to generate a second DC voltage having a second value based on an amplitude of the amplified AC signal.

Interposer and semiconductor package embodiments provide for the isolation and suppression of electronic noise such as EM emissions in the semiconductor package. The interposer includes shield structures in various embodiments, the shield structures blocking the electrical noise from the noise source, from other electrical signals or devices. The shields include solid structures and some embodiments and decoupling capacitors in other embodiments. The coupling structures includes multiple rows of solder balls included in strips that couple the components and surround and contain the source of electrical noise.

Interposer and semiconductor package with noise suppression features

A method of generating an output signal includes determining a sampling period N according to a number of most significant bits (MSBs) of a divider number control signal. The method also includes determining a first logic value of a control signal by a comparing circuit based on the sampling period N, and generating a coarse tuning signal by a code generating circuit based on a phase difference signal and the control signal. When an M-th least significant bit (LSB) of the number of MSBs of the divider number control signal equals a second logic value, the sampling period N is set based on the M-th LSB of the number of MSBs of the divider number control signal.

Auto frequency calibration method

A semiconductor device comprises a guarded circuit. The semiconductor device also comprises a guard ring surrounding the guarded circuit. The semiconductor device further comprises a resonant circuit coupled with the guard ring. The resonant circuit comprises an input node coupled with the guard ring. The resonant circuit also comprises an inductor. The resonant circuit further comprises a capacitor coupled with the inductor. The resonant circuit additionally comprises a ground node configured to carry a ground voltage. The inductor and the capacitor are coupled between the input node and the ground node.

Semiconductor device with guard ring coupled resonant circuit

An apparatus comprises a code generator configured to generate a coarse tuning signal and a reset signal based on a reference frequency and a phase difference signal. The apparatus also comprises a digital loop filter configured to generate a fine tuning signal based on the phase difference signal. The apparatus further comprises a voltage control oscillator configured to generate an output signal based on the coarse tuning signal and the fine tuning signal. The apparatus additionally comprises a divider configured to generate a divider frequency based on a divider control signal and the output signal. The phase difference signal is based, at least in part, on the divider frequency, and the divider is configured to be reset based on the reset signal.

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Taipei, Taiwan

Yen-Jen Chen