Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Yen-Hsun Lin

Keng-Yung Lin

Minghwei Hong

Hsien-Wen Wan

Bo-Yu Yang

Jueinai Kwo

Juei-Nai Kwo

Kuanhsiung Chen

Ming-Hwei Hong

Chao Kai Cheng

Kuan Chieh Lu

Chien-Hua Fu

A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.

Material having single crystal perovskite, device including the same, and manufacturing method thereof

A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-&#x3ba; dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.

Semiconductor device having high-&#x3ba; dielectric layer and method for manufacturing the same

A semiconductor device includes a semiconductor substrate, a gate structure, and source/drain regions. The gate structure comprises an yttrium oxide layer over the semiconductor substrate, an aluminum oxide layer over the yttrium oxide layer, and a gate electrode on the aluminum oxide layer. The source/drain regions are on the semiconductor substrate and on opposite sides of the gate structure.

Semiconductor device and manufacturing method thereof

A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4&#xd7;6 reconstruction surface, a 2&#xd7;4 reconstruction surface, a 3&#xd7;2 reconstruction surface, a 2&#xd7;1 reconstruction surface, or a 4&#xd7;4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (YO) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.

Single-crystal rare earth oxide grown on III-V compound

A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.

Growing community of inventors

Changhua, Taiwan

Yen-Hsun Lin