Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Hsiang Hsu

Yu-Lung Yeh

Chien-Chang Huang

Chun-Chieh Fang

Wei-Tung Huang

Kuan-Chi Tsai

Jeng-Yann Tsay

Chih-Hung Hsueh

A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

CMOS image sensor structure

A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal-insulator-metal (MIM) capacitor formed on a substrate. The semiconductor device structure also includes an inductor formed on the MIM capacitor. The semiconductor device structure further includes a via formed between the MIM capacitor and the inductor, and the via is formed in a plurality of dielectric layers, and the dielectric layers comprise an etch stop layer.

Interconnection between inductor and metal-insulator-metal (MIM) capacitor

A system for decharging a wafer or substrate disposed on an electrostatic chuck, includes a capacitance detector for measuring a capacitance between the electrostatic chuck and the wafer or substrate, and a decharging voltage calculator for calculating a decharging voltage based at least in part on the capacitance measured by the capacitance detector. The decharging voltage calculated by the decharging voltage calculator of the system is applied to the electrostatic chuck after dechucking to substantially neutralize electrostatic charges on the wafer or substrate.

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Kaoshiung, Taiwan

Yen-Hsiang Hsu