Taiwan Semiconductor Manufacturing Comp. Ltd.

Acer Inc.

Young Lighting Technology Corporation

Yen-Hao Chen

Wei-Han Lai

Chin-Hsiang Lin

Ching-Yu Chang

Chien-Wei Wang

Zheng-Yan Lee

Pin-Hsun Huang

Shu-Han Wang

Ching-Chih Chang

Chien-Chih Chen

Hsin-Hung Lee

Chen-Yu Liu

Chiao-Chih Yang

Ya-Ling Cheng

Ya-Ching Chang

Shang-Wern Chang

Wei-Ching Wu

Chao-Chun Cheng

Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1, x, y, and z all not 0 for same polymer. Crosslinker is monomer, oligomer, polymer including structures B1, B2, B3, B4, and D each independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic group, chain, ring, 3-D structure; R2 and Ra are C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl.

Photoresist composition and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Method of manufacturing a semiconductor device

Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer. The copolymer is

In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

Pattern formation method and material for manufacturing semiconductor devices

A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.

Photosensitive groups in resist layer

Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

Extreme ultraviolet photoresist and method

One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer.

Photolithography process and materials

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the PAG includes a first phenyl ring and a second phenyl ring both chemically bonded to a sulfur, the first and second phenyl rings being further chemically bonded with enhanced sensitivity; performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer.

The present disclosure is directed to a photoresist and a method of performing a lithography process using the photoresist. The photoresist contains a polymer and a photo-acid generator. The photo-acid generator contains a sensitizer component, an acid generator component, and a bonding component that bonds the sensitizer component to the acid generator component. The bonding component may be either a single bond or a conjugated bond. The lithography process may be an EUV lithography process or an e-beam lithography process.

Photoresist having sensitizer bonded to acid generator

A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.

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Taipei, Taiwan

Yen-Hao Chen