Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Chung Ho

Pin-Cheng Hsu

Yong-Jie Wu

Chung-Te Lin

Hui-Hsien Wei

Chia-Jung Yu

Mauricio Manfrini

Feng-Cheng Yang

Katherine H Chiang

Han-Ting Tsai

Ken-Ichi Goto

Min Cao

Yu-Wei Jiang

Chieh-Fang Chen

Pin-cheng Hsu

A memory structure, device, and method of making the same, the memory structure including: a channel comprising a semiconductor material; a source electrode electrically connected to a first end of the channel; a drain electrode electrically connected to an opposing second end of the channel; a high-k dielectric layer surrounding the channel; a gate electrode surrounding the high-k dielectric layer; and a memory cell electrically connected to the drain electrode and a bit line. The memory cell includes a first electrode that is electrically connected to the drain electrode.

Memory cell device with thin-film transistor selector and methods for forming the same

Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.

Integrated circuit, semiconductor device having stop segment in connection region between logic region and memory cell region

A semiconductor device includes a semiconducting metal oxide fin located over a lower-level dielectric material layer, a gate dielectric layer located on a top surface and sidewalls of the semiconducting metal oxide fin, a gate electrode located on the gate dielectric layer and straddling the semiconducting metal oxide fin, an access-level dielectric material layer embedding the gate electrode and the semiconducting metal oxide fin, a memory cell embedded in a memory-level dielectric material layer and including a first electrode, a memory element, and a second electrode, and a bit line overlying the memory cell. The first electrode may be electrically connected to a drain region within the semiconducting metal oxide fin through a first electrically conductive path, and the second electrode is electrically connected to the bit line.

Memory device including a semiconducting metal oxide fin transistor and methods of forming the same

A planar insulating spacer layer can be formed over a substrate, and a combination of a semiconducting material layer, a thin film transistor (TFT) gate dielectric layer, and a gate electrode can be formed over the planar insulating spacer layer. A dielectric matrix layer is formed thereabove. A source-side via cavity and a drain-side via cavity can be formed through the dielectric matrix layer over end portions of the semiconducting material layer. Mechanical stress can be generated between the end portions of the semiconducting material layer by changing a lattice constant of end portions of the semiconducting material layer. The mechanical stress can enhance the mobility of charge carriers in a channel portion of the semiconducting material layer.

Mobility enhancement by source and drain stress layer or implantation in thin film transistors

A disclosed method of fabricating a semiconductor structure includes forming a first conductive pattern over a substrate, with the first conductive pattern including a first conductive line and a second conductive line. A barrier layer may be conformally formed over the first conductive line and the second conductive line of the first conductive pattern. An insulating layer may be formed over the barrier layer. The insulating layer may be patterned to form openings between conductive lines of the first conductive pattern a second conductive pattern may be formed in the openings. The second conductive pattern may include a third conductive line is physically separated from the first conductive pattern by the barrier layer. The presence of the barrier layer reduces the risk of a short circuit forming between the first and second conductive patterns. In this sense, the second conductive pattern may be self-aligned relative to the first conductive pattern.

Self-aligned lines and methods for fabricating the same

A memory device and method of making the same, the memory device including bit lines disposed on a substrate; memory cells disposed on the bit lines; a first dielectric layer disposed on the substrate, surrounding the bit lines and the memory cells; a second dielectric layer disposed on the first dielectric layer; thin film transistors (TFTs) embedded in the second dielectric layer and configured to selectively provide electric power to corresponding memory cells, the TFTs comprising drain lines disposed on the memory cells, source lines disposed on the first dielectric layer, and selector layers electrically connected to the source lines and the drain lines; and word lines disposed on the second dielectric layer and electrically connected to the TFTs.

High-density memory device with planar thin film transistor (TFT) selector and methods for making the same

A memory structure includes: first and second word lines; a high-k dielectric layer disposed on the first and second word lines; a channel layer disposed on the high-k dielectric layer and comprising a semiconductor material; first and second source electrodes electrically contacting the channel layer; a first drain electrode disposed on the channel layer between the first and second source electrodes; a memory cell electrically connected to the first drain electrode; and a bit line electrically connected to the memory cell.

Multi-gate selector switches for memory cells and methods of forming the same

A semiconductor device includes a first dielectric layer, a gate electrode embedded within the first dielectric layer, a layer stack including a gate dielectric layer, a channel layer including a semiconducting metal oxide material, and a second dielectric layer, and a source electrode and a drain electrode embedded in the second dielectric layer and contacting a respective portion of a top surface of the channel layer. A combination of the gate electrode, the gate dielectric layer, the channel layer, the source electrode, and the drain electrode forms a transistor. The total length of the periphery of a bottom surface of the channel layer that overlies the gate electrode is equal to the width of the gate electrode or twice the width of the gate electrode, and resputtering of the gate electrode material on sidewalls of the channel layer is minimized.

Semiconducting metal oxide transistors having a patterned gate and methods for forming the same

A semiconductor device, an integrated circuit, and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a thin-film transistor (TFT) over the substrate, and a magnetoresistive random-access memory (MRAM) cell electrically coupled to the TFT. The TFT includes a gate electrode; a gate dielectric layer disposed over the gate electrode; source/drain electrodes disposed above the gate electrode; and an active layer disposed above the gate electrode. A protection layer is disposed between the TFT and the MRAM cell and electrically connects the MRAM cell to the TFT.

Semiconductor device, integrated circuit and method of manufacturing the same

A disclosed semiconductor device includes a substrate, a gate electrode formed on the substrate, a gate dielectric layer formed over the gate electrode, a source electrode located adjacent to a first side of the gate electrode, and a drain electrode located adjacent to a second side of the gate electrode. A gate dielectric formed from an etch-stop layer and/or high-k dielectric layer separates the source electrode from the gate electrode and substrate and separates the drain electrode from the gate electrode and the substrate. First and second oxide layers are formed over the gate dielectric and are located adjacent to the source electrode on the first side of the gate electrode and located adjacent to the drain electrode on the second side of the gate electrode. A semiconductor layer is formed over the first oxide layer, the second oxide layer, the source electrode, the drain electrode, and the gate dielectric.

Back channel field effect transistors using a pull back process and methods for forming the same

A device structure includes at least one selector device. Each selector device includes a vertical stack including, from bottom to top, a bottom electrode, a metal oxide semiconductor channel layer, and a top electrode and located over a substrate, a gate dielectric layer contacting sidewalls of the bottom electrode, the metal oxide semiconductor channel layer, and the top electrode, and a gate electrode formed within the gate dielectric layer and having a top surface that is coplanar with a top surface of the top electrode. Each top electrode or each bottom electrode of the at least one selector device may be contacted by a respective nonvolatile memory element to provide a one-selector one-resistor memory cell.

Vertical metal oxide semiconductor channel selector transistor and methods of forming the same

An embodiment of an integrated circuit chip includes a combination processing core and magnetoresistive random access memory (MRAM) circuitry integrated into the chip. The MRAM circuitry includes a plurality of MRAM cells. The MRAM cells are organized into a number of memories, including a cache memory, a main or working memory and an optional secondary storage memory. The cache memory includes multiple cache levels.

Processing core and MRAM memory unit integrated on a single chip

A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Growing community of inventors

Hsinchu, Taiwan

Yen-Chung Ho