Playnitride Display Co., Ltd.

Yen-Chun Tseng

Tzu-Yang Lin

Yi-Chun Shih

Jyun-De Wu

Fei-Hong Chen

Pai-Yang Tsai

Jian-Zhi Chen

Yun-Li Li

Yun-Syuan Chou

A light-emitting element including an epitaxial structure and a light guide structure is provided. The epitaxial structure has a first surface and a second surface opposite to each other and includes an active layer. The light guide structure is disposed on the first surface of the epitaxial structure and includes a first light reflection layer and a filter layer covering on an upper surface of the first light reflection layer. The first light reflection layer completely covers the first surface. A display panel is also provided.

Light-emitting element and display panel including a light guide structure to improve optical quality

A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

Micro light-emitting diode and display panel

A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Micro light emitting diode and display panel having etch protection conductive layer

A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Micro light-emitting diode

A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.

Micro light-emitting device

A micro semiconductor device, including a semiconductor structure, a current confinement layer, a first type electrode, and a second type electrode, is provided. The current confinement layer is disposed in the semiconductor structure. The current confinement layer includes an oxidized area and a non-oxidized area. The first type electrode and the second type electrode are both disposed on the current confinement layer. An orthographic projection of a part of the oxidized area on a bottom surface of the semiconductor structure away from the first type electrode and the second type electrode is located between an orthographic projection of the first type electrode on the bottom surface and an orthographic projection of the second type electrode on the bottom surface.

Micro semiconductor device

The present invention discloses a micro LED structure including a first semiconductor layer, a first electrode, a second electrode, and an active layer. The first semiconductor layer has two opposite sides defined as a first surface and a second surface. The first semiconductor layer has a doped region located therein and exposed on the first surface. A pn junction is formed between the doped region and the first semiconductor layer. The first electrode and the second electrode, located on the first surface, are capable of electrically connecting to the first semiconductor layer and the doped region respectively. The active layer is adjacent to the second surface. Wherein the first semiconductor layer is a first doping type, and the doped region is a second doping type different from the first doping type, and the first semiconductor layer and the pn junction are located at identical side of the active layer.

Growing community of inventors

Miaoli County, Taiwan

Yen-Chun Tseng