Xiamen Sanan Optoelectronics Technology Co., Ltd.

Yen-Chih Chiang

Chen-Ke Hsu

Chih-Wei Chao

Chia-En Lee

Zhibai Zhong

Su-Hui Lin

Wen-Yu Lin

Jianming Liu

Qiuyan Fang

A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip. The light absorption substrate has a side forming a bubble structure at an interface with the packaging glue. A reflecting layer is formed from material refractivity difference of the packaging glue, the bubble structure and the light absorption substrate for eliminating or reducing light absorption by the substrate.

Light emitting diode packaging structure

A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.

Flip-chip light emitting device and fabrication method

A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.

Flip-chip high-voltage light emitting device and fabrication method

A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip, wherein the packaging structure also comprises a baffle that surrounds the outer side wall of the light absorption substrate. Adding of a baffle structure in the support system of the packaging structure can effectively prevent light from being absorbed by the light absorption substrate and reflect such light out of the packaging structure, thus increasing probability of light emitting and improving light intensity of the vertical LED chip.

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Xiamen, China

Yen-Chih Chiang