Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Singapore Pte. Ltd.

Yen-Cheng Liu

Shang-Ying Tsai

Kuei-Sung Chang

Cheng-Yu Hsieh

Hsin-Ting Huang

Ching-Ray Chen

York Ted Su

Ko-Feng Chen

A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Semiconductive structure and manufacturing method thereof

A semiconductor device includes a first wafer and a second wafer. The first wafer has a top portion. The second wafer is disposed on the top portion of the first wafer, wherein the second wafer has a bottom portion bonded on the top portion of the first wafer, and a non-bonded area of the bottom portion has a width smaller than 0.5 mm. The bottom portion of the second wafer has a size smaller than or equal to that of the top portion of the first wafer. In some embodiments, the top portion of the first wafer has first rounded corners, and the bottom portion of the second wafer has second corners. A cross-sectional view of each of the second rounded corners has a radius smaller than that of each of first rounded corners. In some embodiments, the bottom portion of the second wafer has right angle corners.

Wafer stack and fabrication method thereof

A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.

A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.

Efficient algorithms for estimating LSFCs with no aid of SSFCs by taking advantage of the channel hardening effect and large spatial samples available to a massive MIMO base station (BS) are proposed. The LSFC estimates are of low computational complexity and require relatively small training overhead. In the uplink direction, mobile stations (MSs) transmit orthogonal uplink pilots for the serving BS to estimate LSFCs. In the downlink direction, the BS transmits either pilot signal or data signal intended to the MSs that have already established time and frequency synchronization. The proposed uplink and downlink LSFC estimators are unbiased and asymptotically optimal as the number of BS antennas tends to infinity.

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Taipei, Taiwan

Yen-Cheng Liu