Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Cheng Ho

Hsin-Chang Lee

Chia-Jen Chen

Shih-Ming Chang

Tran-Hui Shen

Chien-Cheng Chen

Chen-Shao Hsu

Chih-Cheng Lin

Ping-Hsun Lin

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Method of manufacturing photo masks

A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

Photomask and method of fabricating a photomask

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Taichung, Taiwan

Yen-Cheng Ho