United Microelectronics Corp.

Himax Technologies, Inc.

Himax Display, Inc.

Liqxtal Technology Inc.

Industrial Technology Research Institute

Chorum Technologies Inc.

Chi Mei Optoelectronics Corporation

Other

Mediatek Singapore Pte. Ltd.

Tsinghua University

Yen-Chen Chen

Kuo-Chih Lai

Yang-Ju Lu

Shih-Min Chou

Yao-Hung Liu

Jen-Po Huang

Yun-Tzu Chang

Nien-Ting Ho

Chien-Ming Lai

Hui-Ling Chen

Sheng-Yao Huang

Ching-Yun Chang

Yung-Yuan Ho

Hung-Shan Chen

Wei-Ming Hsiao

Chin-Fu Lin

Chun-Yuan Wu

Chi-Mao Hsu

Kuang-Yi Wu

Jian-Yu Liu

Ding-Lung Chen

Chien-Pin Chen

Hon-Yuan Leo

Li Li Ding

Hai Tao Liu

Shouguo Zhang

Qinggang Xing

Ming Hua Du

Chia-Chang Hsu

Cheng-Chi Yen

Charles Wong

Hsiang-Chieh Yen

Chia-Cheng Lai

Seng Wah Liau

Xiao Wu

Wei-Ning Chen

Lin-Kai Bu

Chun-Yao Yang

Kuan-Chun Lin

Chuan-Cheng Hsiao

Yee-Lu Zhaog

Han Chuan Fang

Yih-Shen Chen

Biing-Seng Wu

Bin-Siang Tsai

Yuanyuan Zhang

Chun-Yen Chang

Min-Chuan Tsai

Fei Xu

Ai-Sen Liu

Kuan-Hsu Fan-Chiang

Chih-Wei Wang

Tsung-Hsi Yang

Chun-Ling Lin

Bing-Jei Liao

Jianwei Zhang

Ko-Wei Lin

Kun-Cheng Hung

Mao-Jung Chung

Chii-Horng Chen

Kuo-Yuin Li

Yuh-Ren Tsai

Chien-Tang Wang

Yih-Long Tseng

Yabo Li

Sheng-Ren Chiu

Xu Yang Shen

Mingjun Xu

Biwei Chen

Wen-Liang Wu

Yaochao Liu

Chia-Chang Tien

Wen-Han Hsieh

Jung-Chung Chang

Chien-Ho Lin

Mao-Jin Chern

Robert Hu

Chi-Yuan Peng

Yun Tzu Chang

Fang-Yi Liu

Pao-Wang Liao

An embodiment of the invention provides a communication apparatus comprising a radio transceiver and a modem processor. The radio transceiver is configured to transmit or receive wireless signals in a wireless network. The modem processor is coupled to the radio transceiver and configured to perform operations comprising: dividing a tracking reference signal (TRS) set into a plurality of TRS subsets; scheduling a first part of the plurality of TRS subsets for a beam management; and scheduling a second part of the plurality of TRS subsets for a synchronization.

Communication apparatus and method for handling a tracking reference signal scheduling

An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Oxide semiconductor field effect transistor

An optical sensing device adopted to use structured light to detect an object is provided. The optical sensing device includes a structured light projector and a sensor. The structured light projector includes a light source and at least one beam multiplication film. The light source is configured to emit a light beam. The at least one beam multiplication film is disposed on a transmission path of the light beam and is made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the at least one beam multiplication film, so as to form the structured light. The sensor is configured to sense the structured light reflected from the object. Besides, a structured light projector is also provided.

Structured light projector

A light projector including a light source, a beam multiplication film, and a tunable wave plate is provided. The light source is configured to emit a light beam. The beam multiplication film is disposed on a transmission path of the light beam and made of anisotropic refractive index material, wherein a plurality of separated light beams are produced after the light beam from the light source passes through the beam multiplication film. The tunable wave plate is disposed on transmission paths of the separated light beams from the beam multiplication film and configured to modulate the separated light beams.

Light projector

A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Semiconductor device

Method of forming oxide semiconductor field effect transistor

Optical sensing device and structured light projector

Aspects of the disclosure provide an electronic device. The electronic device can include transceiver circuitry and processing circuitry. The transceiver circuitry can be configured to receive signals from wireless service provider networks. The processing circuitry can be configured to detect, from the signals, a high speed rail (HSR) signature of one of the wireless service provider networks. The HSR signature can indicate that the one of the wireless service provider networks is a first network for a high speed rail usage. The processing circuitry can also be configured to determine a mobility of the electronic device based on the signals in a time duration. Further, the processing circuitry can be configured to selectively camp on a first cell of the first network based on the mobility of the electronic device.

Apparatus and method of speed based network selection

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region, a second region, a third region, and a fourth region; forming a tuning layer on the second region; forming a first work function metal layer on the first region and the tuning layer of the second region; forming a second work function metal layer on the first region, the second region, and the fourth region; and forming a top barrier metal (TBM) layer on the first region, the second region, the third region, and the fourth region.

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

Oxide semiconductor field effect transistor and forming method thereof

An optical sensing device configured to detect an object or features of the object is provided. The optical sensing device includes a structured light projector and a sensor. A structured light projector is configured to project a structured light to the object and includes a light source and at least one tunable liquid crystal diffractive optical element (LCDOE). The light source is configured to emit a light beam. The at least one tunable LCDOE is disposed on a path of the light beam and configured to convert the light beam into the structured light to form a structured light pattern on the object. The LCDOE is capable of controlling the structured light pattern by controlling voltage distribution to a liquid crystal layer in the LCDOE. The sensor is configured to sense a reflected light formed by the object reflecting the structured light. Besides, a structured light projector is also provided.

A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Method of fabricating a metal layer

Growing community of inventors

Tainan, Taiwan

Yen-Chen Chen