Phostek, Inc.

Yen-Chang Hsieh

Heng Liu

Jinn Kong Sheu

Ya-Hsuan Shih

Chia-Nan Chen

Chun-Chao Li

The present invention is directed to a light-emitting diode (LED) device, which includes at least one LED unit. Each LED unit includes at least one LED, which includes a first doped layer, a second doped layer and a conductive defect layer. The conductive defect layer is formed on the first or second doped layer. The conductive defect layer may be deposited between two LEDs, or between the first/second doped layer and an electrode.

Light-emitting diode device

A method of manufacturing a semiconductor apparatus is disclosed. A first-type doped layer, a second-type doped layer, and an internal electrical connection layer are formed. The internal electrical connection layer is deposited and electrically coupled between the first-type doped layer and the second-type doped layer. In one embodiment, the internal electrical connection layer is formed by using a group IV based precursor and nitrogen based precursor. In another embodiment, the internal electrical connection layer is formed by a mixture comprising a carbon-contained doping source, and the internal electrical connection layer has a carbon concentration greater than 10atoms/cm. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the first-type doped layer and the second-type doped layer.

Method of manufacturing a semiconductor apparatus

A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 10atoms/cm. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.

Growing community of inventors

Hsinchu, Taiwan

Yen-Chang Hsieh