Taiwan Semiconductor Manufacturing Comp. Ltd.

Etron Technology, Inc.

Yen-An Chang

Yi-Chun Shih

Chia-Fu Lee

Yu-Der Chih

Der-Min Yuan

Chieh-Pu Lo

Po-Hao Lee

Yi-Hao Chang

Wei-Ming Huang

Hao-Jan Yang

Chun Shiah

Shih-Hsing Wang

Yu-Lin Chen

Ming Hung Wang

Kuang-Fu Teng

Yao Yi Liu

Po-Ching Wu

Chun-Ching Hsia

Cheng Han Lu

Wen-Tung Yang

A circuit is disclosed. The circuit includes a first pump circuit configured to receive a first reference voltage and provide an output voltage at a first level based on the first reference voltage. The circuit includes a second pump circuit configured to receive a second reference voltage and provide the output voltage at a second level based on the second reference voltage. The first reference voltage is lower than the second reference voltage, and the first level is lower than the second level.

Voltage provision circuits and methods for operating the same

A semiconductor device and a method of operating the semiconductor device are disclosed. In one aspect, the semiconductor device includes a level shifting circuit configured to generate an output voltage in a second voltage domain corresponding to an input signal in a first voltage domain. The level shifting circuit includes a thick-oxide transistor and a thin-oxide transistor. The semiconductor device includes a bias generating circuit operatively coupled to the level shifting circuit and configured to generate a bias voltage substantially higher than a voltage of the input signal, and provide the bias voltage to a gate of the thick-oxide transistor, causing the level shifting circuit to generate the output voltage.

Level shifter with inside self-protection high bias generator

A voltage regulation circuit includes a voltage regulator that is configured to provide a stable output voltage based on an input voltage; and a control circuit, coupled to the voltage regulator, and configured to provide an injection current to maintain the stable output voltage in response to an enable signal provided at an input of the control circuit transitioning to a predetermined state and cease providing the injection current when the control circuit detects that a voltage level of the output voltage is higher than a pre-defined voltage level.

Low-dropout voltage regulator circuit

A reference voltage generator includes an input terminal configured to receive an enable signal and an output terminal configured to provide an output signal. A voltage generator circuit is arranged to generate a first output voltage signal, and a pre-settling circuit is arranged to generate a second output voltage. The pre-settling circuit is configured to provide the second output voltage signal at the output terminal in response to the enable signal received at the input terminal, and following a first time period provide the first output voltage at the output terminal.

Reference voltage generation

A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.

Dynamic random access memory applied to an embedded display port

In some aspects of the present disclosure, a power detection system is disclosed. In some aspects, the power detection system includes a constant-transconductance (gm) reference generator circuit receiving a power supply voltage. In some embodiments, the constant-gm reference generator circuit includes a first current mirror to provide a first reference voltage and a second current mirror to provide a second reference voltage. In some embodiments, the constant-gm reference generator circuit includes a power detection circuit coupled to the first current mirror to receive the first reference voltage. In some embodiments, the power detection circuit is coupled to the second current mirror to receive the second reference voltage. In some embodiments, the power detection is operated to receive the power supply voltage. In some embodiments, the power detection circuit is operated to provide an output voltage having one of two logic states at least based on the second reference voltage and the power supply voltage.

System and method for constant transconductance based power supply detection

A memory device for CIM has a memory array including a plurality of memory cells arranged in an array of rows and columns. The memory cells have a first group of memory cells and a second group of memory cells. Each row of the array has a corresponding word line, with each memory cell of a row of the array coupled to the corresponding word line. Each column of the array has a corresponding bit line, with each memory cell of a column of the array coupled to the corresponding bit line. A control circuit is configured to select the first group of memory cells or the second group of memory cells in response to a group enable signal.

Compute in memory (CIM) memory array

The disclosed system and method reduce on-chip power IR drop caused by large write current, to increase the write IO number or improve write throughput and to suppress write voltage ripple at the start and end of a write operation. The disclosed systems and methods are described in relation to stabilizing the bit line voltage for MRAMs, however, the disclosed systems and methods can be used to stabilize the bit line voltage of any memory configuration that draws large currents during short write pulses or, more generally, to selectively assist a power supply generator in supplying adequate power to a load at times of large power consumption.

Power supply generator assist

Low-dropout voltage regulation circuit

A power regulation system including a reference generator, a temperature compensation circuit coupled to the reference generator, and a low-dropout (LDO) regulator circuit coupled to the temperature compensation circuit, wherein the temperature compensation circuit provides a reference voltage to the LDO regulator circuit at least based on a ratio of a first current and a second current.

On-chip power regulation system for MRAM operation

In an embodiment, a voltage regulation circuit includes a regulation circuit with a voltage regulator that provides an output voltage and a control circuit, coupled to the voltage regulator. The control circuit pulls up the output voltage to a reference voltage responsive to the control circuit detecting that a first voltage level of the output voltage is lower than a predefined voltage level. The control circuit decouples the output voltage from the reference voltage responsive to the control circuit detecting that the first voltage level of the output voltage is higher than the predefined voltage level.

An integrated circuit device is provided. The integrated circuit device includes: a functional device including a selection device; and a bias generator circuit coupled to the selection device and configured to detect a leakage current of the functional device and generate a bias voltage based on the detected leakage current. The bias voltage is provided to the selection device to control the selection device.

Growing community of inventors

Miaoli County, Taiwan

Yen-An Chang