Applied Materials, Inc.

Kla-tencor Technologies Corporation

Yeishin Tung

Robert Jan Visser

Byung Sung Kwak

Dinesh Kabra

Gangadhar Banappanavar

Guoheng Zhao

Todd J Egan

Ying Wang

Anne Testoni

An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

In-line monitoring of OLED layer thickness and dopant concentration

An organic light-emitting diode (OLED) deposition system has a workpiece transport system configured to position a workpiece within the OLED deposition system under vacuum conditions, a deposition chamber configured to deposit a first layer of organic material onto the workpiece, a metrology system having one or more sensors measure of the workpiece after deposition in the deposition chamber, and a control system to control a deposition of the layer of organic material onto the workpiece. The metrology system includes a digital holographic microscope positioned to receive light from the workpiece and generate a thickness profile measurement of a layer on the workpiece. The control system is configured to adjust processing of a subsequent workpiece at the deposition chamber or adjust processing of the workpiece at a subsequent deposition chamber based on the thickness profile.

Digital holography for alignment in layer deposition

Disclosed are apparatus and methods for characterizing a potential defect of a semiconductor structure. A charged particle beam is scanned over a structure which has a potential defect. X-rays are detected from the scanned structure. The X-rays are in response to the charged particle beam being scanned over the structure. The potential defect of the scanned structure is characterized based on the detected X-rays. For example, it may be determined whether a potentially defective via has a SiO plug defect by comparing an X-ray count ratio of oxygen over silicon of the defective via with an X-ray count ratio of a known defect-free reference via. If the defective via has a relatively high ratio (more oxygen than silicon) as compared to the reference via, then it may be determined that a SiO plug defect is present within the defective via. Otherwise, the via may be defmed as having a different type of defect (e.g., not a SiO plug defect) or defined resulting in a &ldquo;false&rdquo; defect. Accordingly, specific embodiments of the present invention may be utilized to filter &ldquo;false&rdquo; defects from a defect sample.

Non-destructive root cause analysis on blocked contact or via

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San Jose, CA, United States of America

Yeishin Tung