Applied Materials, Inc.

Yeh-Jen Kao

Mei Yin Chang

Eric Andrew Englhardt

Alan F Morrison

Marvin De-Dui Liao

Robert B Majewski

Michal Danek

John P Parks

Fufa Chen

Yen-Kun Victor Wang

Dale R Dubois

Fong M Chang

James J Chen

David P Wanamaker

Dale DuBois

Yen Kun Wang

Michael Danek

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Method for constructing a film on a semiconductor wafer

The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

Apparatus and method for depositing low K dielectric materials

The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is formed on the wafer, while the wafer is in the processing chamber. Next, the layer of material is oxidized, while the wafer is in the processing chamber. A semiconductor wafer processing chamber for carrying out such a construction in-situ may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Apparatus for constructing an oxidized film on a semiconductor wafer

A multi-channel faceplate 200, that in some embodiments is monolithic, is provided as a portion of a gas delivery system to a process chamber 100. At least two sets of gas pathways are disposed through a faceplate and allow for independent delivery of separate gases into a process chamber 100. In one embodiment, a first gas pathway, which includes a first set of vertical channels 226, is formed through the faceplate 200. A second gas pathway includes a second set of vertical channels 228, which is formed through a portion of the faceplate and connected to a set of interconnecting horizontal channels 222 in the faceplate 200, where the second gas pathway maintains fluidic separation from the first gas pathway, prior to the gases entering the process chamber 100.

Dual channel gas distribution plate

A vacuum processing system is provided with a programmable interlock circuit for combining the interlock signals generated by the system into combined interlock signals. The programmable interlock circuit uses a matrix of switches to select which interlocks will be combined to form which combinations. The interlock signals are formed by two lines that are shorted together when the interlock signal is okay and not shorted together when the interlock signal is not okay. When the two lines are shorted together, then they activate a relay to send a signal in a line of relays, each of which is activated by a different interlock signal. The matrix of switches short out the relay switches in order to deselect one interlock input for one interlock output. Each interlock signal is associated with an LED for visual indication of whether the interlock is okay. Likewise, each combined interlock signal is associated with an LED for visual indication of whether the combination of interlocks is okay. Additionally, each interlock signal is associated with a defeat circuit wherein a jumper may defeat the interlock signal for every combination. Each defeat circuit is provided with an LED for visual indication of whether the interlock is defeated.

Programmable electrical interlock system for a vacuum processing system

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San Jose, CA, United States of America

Yeh-Jen Kao