Taiwan Semiconductor Manufacturing Comp. Ltd.

Yeh-Hsun Fang

Chia-Ping Lai

Chung-Chuan Tseng

Chiao-Chi Wang

Chui-Ya Peng

Chih-Fen Chen

Bang-Yu Huang

Tsung-Ying Liu

Li-Hsin Chu

Zhi-Wei Zhuang

Szu-Chien Tseng

Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Methods for forming image sensors

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.

Germanium-based photodetector with reduced dark current

A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.

Image sensor device and methods of forming the same

A method of forming a semiconductor device includes: forming a patterned hard mask layer on a semiconductor substrate; performing a first etching process to form a recess in an exposed portion of the semiconductor substrate, using a first etchant that includes a first halogen species; performing a second etching process using a second etchant that includes a second halogen species, such that the second halogen species forms a barrier layer in the semiconductor substrate, surrounding the recess; and growing a detection region in the recess using an epitaxial growth process. The barrier layer is configured to reduce diffusion of the first halogen species into the detection region.

Photodetector with reduced dark current sensitivity and methods of forming the same

In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d) above the at least one first trench. A first depth parameter (t) of the second depth (d) relative to the first depth (d) is determined. The processing temperature (T) is then determined based on the first depth parameter (t).

Method for calibrating temperature in chemical vapor deposition

In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d) above the at least one first trench. A depth parameter (t) the second depth (d) relative to the first depth (d) is determined. The processing temperature (T) is then determined based on a pre-determined standard reference curve comprising a plurality of references depth parameters in a first range as a function of a plurality of reference processing temperatures in a second range.

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Hsin-Chu, Taiwan

Yeh-Hsun Fang