Stmicroelectronics S.r.l.

Stmicroelectronics Gmbh

Stmicroelectronics Asia Pacific Pte Limited

Yean Ching Yong

Stefania Fortuna

Ditto Adnan

Voon Cheng Ngwan

Maurizio Gabriele Castorina

Fadhillawati Tahir

Churn Weng Yim

An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.

Gate contact structure for a trench power MOSFET with a split gate configuration

A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further comprises etching the trench to a depth of about 1.7 &#x3bc;m.

Trench MOSFET

Growing community of inventors

Singapore, Singapore

Yean Ching Yong