Hitachi Global Storage Technologies Netherlands B.v.

Western Digital (fremont), Inc.

Hitachi Global Technologies Netherlands B.v.

Yeak-Chong Wong

Ming Jiang

Andrew Crehan Walker

Jian-Huei Feng

Clayton R Newman

Hung-Chin Guthrie

John I Kim

Hieu Lam

Wai B Fu

Shahram Y Mehdizadeh

Toshihiro Morisawa

Amelia Clara Muro

Hung- Chin Guthrie

Negar Karimi

Methods for providing run to run process control using a dynamic tuner are provided. Once such method includes receiving a data point for a process output parameter, determining whether the data point is within a desired range for the process output parameter, setting, when the data point is within the desired range, a dynamic lambda value equal to a preselected base lambda value, setting, when the data point is not within the desired range, the dynamic lambda value equal to a value based on the preselected base lambda value, a degree of difference between the data point and a target for the process output parameter, and a scale factor, calculating an exponentially weighted moving average using the dynamic lambda value, and adjusting the process control parameter in accordance with the exponentially weighted moving average.

Methods for providing run to run process control using a dynamic tuner

Methods for providing asymmetric control of process parameters are described. One such method includes receiving a data point for the process parameter relative to the wafer, selecting a first value for a process weighting factor when the data point is consistent with a first criteria, selecting a second value for the process weighting factor when the data point is consistent with a second criteria, where the second value is not equal to the first value, calculating an exponential weighted moving average of the process parameter based on the data point and the process weighting factor, updating the process parameter with the exponential weighted moving average, and using the updated process parameter to control the process and thereby treat the wafer. The methods can use one or more weighting factor switch limits to define different areas of risk associated with a target for the process parameter.

Methods for providing asymmetric run to run control of process parameters

Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

Controlling the thickness of wafers during the electroplating process

An advanced process control (APC) system. The APC system comprises a database for receiving process data from a measurement tool for a plurality of process runs and for storing the process data. A lambda tuner determines a tuned-lambda value corresponding to a process-capability-index value based on upper and lower process control limits and statistics derived from the process data. A process-run controller updates a recipe value based on the received process data and the tuned-lambda value.

Advanced-process-control system utilizing a lambda tuner

During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called 'backside pressure.' Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a 'backside pressure' set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model

A method for processing wafers in a batch processing tool that optimizes yield by minimizing within batch wafer variation in a wafer process. In a tool having a plurality of available wafer positions for a batch process, the method is useful when less than a full batch of wafers is to be processed. All of the possible wafer position combinations are determined and the within batch variation for each position combination is determined. The wafer position combination resulting in the least amount of within batch variation in the wafer process is then selected as the wafer placement combination for use in the process.

Aggregated run-to-run process control for wafer yield optimization

Methods for fabricating pole piece tips for a magnetic transducer are disclosed. The ion-milling operations for trimming Pand notching Pare controlled using feed-forward and feedback. The preferred method of the invention includes steps for setting four time values used in different phases of the ion-milling process based on feed-forward and feedback of measured values including the Pwidth measured in the mask, multiple PB measurements and measurement of the notch depth.

Growing community of inventors

San Jose, CA, United States of America

Yeak-Chong Wong