Seoul Viosys Co., Ltd.

Seoul Opto Device Co., Ltd.

Other

Ye Seul Kim

Kyoung Wan Kim

Yeo Jin Yoon

Sang Won Woo

Jin Young Lee

Sang Hyun Oh

Ji Hye Kim

Duk Il Suh

Da Yeon Jeong

Keum Ju Lee

Tae Kyoon Kim

Jae Moo Kim

Kyung Wan Kim

In Soo Kim

Jeong Hee Yang

Sang-Hyun Oh

Shin Hyoung Kim

Ji Hun Kim

Yong Woo Ryu

Tae Gyun Kim

Tae Jun Park

Min Chan Heo

Jun Woong Lee

Song Hee Kim

Duk Ii Suh

A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25λ+10%, a second group having an optical thickness in a range of 0.25λ−10% to 0.25λ+10%, and a third group having an optical thickness less than 0.25λ−10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25λ and greater than 0.25λ, the second material layers have a smaller average optical thickness than the first group of the first material layers.

Light emitting diode chip having distributed bragg reflector

Disclosed is an accessory for an electronic device, which is attached to the rear surface of an electronic device or an electronic device case. A first embodiment includes a cone having an empty space therein, a wrinkle part formed on a body thereof, and an upper portion and a lower portion that are open, an inverted cone having an empty space therein, a wrinkle part formed on a body thereof, an upper portion that is open, and a lower portion having a protrusion extending therefrom, the protrusion being composed of a neck part and a head part, a clamping ring, which is positioned inside the cone and coupled to the neck part of the protrusion in a state in which the protrusion is inserted into an upper opening of the cone, and a neck cylinder for surrounding the neck part of the protrusion.

Accessory for electronic device

A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength &#x3bb; of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25&#x3bb; and less than 0.3&#x3bb;, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25&#x3bb;, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.

Light emitting diode chip having distributed Bragg reflector

A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.

Light emitting diode and light emitting device having the same

A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.

Light emitting diode

A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25&#x3bb;+10%, in a range of 0.25&#x3bb;&#x2212;10% to 0.25&#x3bb;+10%, and less than 0.25&#x3bb;&#x2212;10%, respectively. With respect to a central wavelength (&#x3bb;: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.

Light emitting diode having distributed Bragg reflector

A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

Light emitting element

The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Light emitting diode chip having electrode pad

A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

Light emitting diode chip having a small area and slim thickness, light emitting device and electronic device including the same

Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

Ultraviolet light emitting device having current blocking layer

According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Light-emitting diode with improved light extraction efficiency

A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

Growing community of inventors

Ansan-si, South Korea

Ye Seul Kim