Semes Co., Ltd.

Samsung Electronics Co., Ltd.

Ye Rim Yeon

Ji Hoon Jeong

Young Dae Chung

Tae Shin Kim

Jung Suk Goh

Jee Young Lee

Won Geun Kim

Min Hee Cho

Young-Hoo Kim

Jung-Min Oh

Pil Kyun Heo

Hyun Yoon

Do Yeon Kim

Kuk Saeng Kim

Young Je Um

Kwang Sup Kim

Da Jeong Kim

Ji Soo Jeong

Hyo San Lee

Do Youn Lim

Tae Keun Kim

Yong Jun Seo

Cheng Bin Cui

Jae Seong Lee

Byeong Geun Kim

Mi Young Jo

Yoon Ki Sa

Mi Hyun Park

Jun Taek Koo

Hae Rim Oh

A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

Apparatus for and method of treating substrate

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.

Cleaning composition, cleaning apparatus, and method of fabricating semiconductor device using the same

An embodiment of the present invention provides a substrate cleaning method including: supplying of a liquid cleaning solution containing a thermoreactive polymer resin in a solvent to a substrate; trapping of particles by gelling the liquid cleaning solution by phase transition through first heat treatment; liquefying of the gel-state cleaning solution with the particle trapped therein by phase transition through second heat treatment; and removing of the liquefied cleaning solution by supplying a rinse solution.

Method and apparatus for substrate cleaning

Growing community of inventors

Hwaseong-si, South Korea

Ye Rim Yeon