Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Ye-hwan Kim

Un-gyu Paik

Yun-seok Choi

Sang-Kyun Kim

Yool Kang

Kwang-bok Kim

Jung-sik Choi

Boo-deuk Kim

Jea-Gun Park

Yun-Jeong Kim

Jin-Hyung Park

Jae-Hyung Lim

Jong-Young Cho

Ji-hoon Seo

Hee-Sub Hwang

Hao Cui

Gi-Sik Hong

Kyoung-sil Park

Choong-Ho Han

A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

Method of forming patterns for semiconductor device

A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NOfunctional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.

Slurry composition for chemical mechanical polishing, method of preparing the same, and polishing method using the same

A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

CMP slurry composition for polishing an organic layer and method of forming a semiconductor device using the same

Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

Multi-selective polishing slurry composition and a semiconductor element production method using the same

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Seoul, South Korea

Ye-hwan Kim