Skhynix Inc.

Ye Cheon Cho

Jong Ho Lee

Young Ho Lee

Beom Seok Lee

Hwan Jun Zang

Jun Ku Ahn

Woo Tae Lee

Sang Hyun Ban

Sung Lae Cho

Uk Hwang

Gwang Sun Jung

A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.

Chalcogenide material, variable resistance memory device and electronic device

Growing community of inventors

Icheon, South Korea

Ye Cheon Cho