United Microelectronics Corp.

Ye Chao Li

Hong Liao

Chi-Fa Ku

Lanxiang Wang

Duan Quan Liao

Hui Ying Yang

Chao Jiang

Xing Hua Zhang

A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.

Method for performing deep n-typed well-correlated (DNW-correlated) antenna rule check of integrated circuit and semiconductor structure complying with DNW-correlated antenna rule

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.

Semiconductor device and method for fabricating the same

Growing community of inventors

Singapore, Singapore

Ye Chao Li