Applied Materials, Inc.

Lam Research Corporation

Yaxin Wang

Tetsuya Ishikawa

Alan W Collins

Fred Conrad Redeker

Shijian Li

Artur Kolics

Turgut Sahin

Nanhai Li

Ming Xi

Xiaomin Bin

Marina Polyanskaya

Timothy Weidman

Jun Zhao

Farhad K Moghadam

Arulkumar P Shanmugasundram

Hongbin Fang

Praveen Nalla

Novy Sastrawati Tjokro

Xiaoliang Jin

Christopher Wade

Patrick Little

Elaine Pao

Michael S Barnes

Mehul B Naik

Christopher Dennis Bencher

Hichem M'Saad

Pravin K Narwankar

Derek R Witty

Lin Zhang

William Thie

Sean M Seutter

Thanh Ngoc Pham

Manoj Vellaikal

Yuji Maeda

Josh Harris Golden

R Suryanarayanan Iyer

Xianzhi Tao

Deepak Upadhyaya

Sanjeev Tandon

Feng Gao

Eugene Tzou

Fang Mei

Padmanaban Krishnaraj

Annabel Susan Nickles

Thomas Mele

Diana Chan

Lie-Yea Cheng

A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Method of electroless plating using a solution with at least two borane containing reducing agents

Electroless plating solution with at least two borane containing reducing agents

A method for providing electroless deposition of a metal layer on a plurality of metal patterns, wherein a dielectric surface is between some of the plurality of metal patterns and metal residue is on the dielectric surface is provided. The dielectric surface is pretreated with an alkaline solution with a pH of at least 8 comprising at least one complexing agent, wherein the complexing agent forms a metal complex with the metal residue and wherein some metal oxide residue remains. The dielectric surface is pretreated with an acidic solution, wherein the acidic solution dissolves metal oxide residue. Metal is electrolessly deposited on the plurality of metal patterns.

Process to reduce nodule formation in electroless plating

A method for forming semiconductor devices on a substrate under a porous low-k dielectric layer, wherein features are formed in the porous low-k dielectric layer and wherein a barrier layer is formed over the porous low-k dielectric layer is provided. Contacts are formed in the features. The barrier layer is planarized. A cap layer is formed over the contacts, wherein the forming the cap layer provides metal and organic contaminants in the porous low-k dielectric layer. The metal contaminants are removed from the porous low-k dielectric layer with a first wet process. The organic components are removed from the porous low-k dielectric layer with a second wet process.

Porous dielectrics K value restoration by thermal treatment and or solvent treatment

A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100&#xb0; C., and depositing a low dielectric constant material.

Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop

A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.

Raman spectroscopy as integrated chemical metrology

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH)&#x2014;N.

Method for silicon based dielectric chemical vapor deposition

An improved deposition chamber () includes a housing () defining a chamber () which houses a substrate support (). A mixture of oxygen and SiFis delivered through a set of first nozzles () and silane is delivered through a set of second nozzles () into the chamber around the periphery () of the substrate support. Silane (or a mixture of silane and SiF) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

Deposition chamber and method for depositing low dielectric constant films

An improved deposition chamber ( ) includes a housing ( ) defining a chamber ( ) which houses a substrate support ( ). A mixture of oxygen and SiF is delivered through a set of first nozzles ( ) and silane is delivered through a set of second nozzles ( ) into the chamber around the periphery ( ) of the substrate support. Silane (or a mixture of silane and SiF ) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices ( ). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.

Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates

The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application

A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.

Deposition of stable dielectric films

The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

CVD ruthenium seed for CVD ruthenium deposition

A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

Method of forming metal electrodes

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Fremont, CA, United States of America

Yaxin Wang