Ricoh Company, Ltd.

Ricoh Research Institute of General Electronics Co., Ltd.

Ricoh Research Institute of General Electronics

Yasuyuki Shindoh

Hirofumi Watanabe

Noriyuki Terao

Masafumi Kumano

Koichi Haga

Yutaka Maita

Tohru Sasaki

Tohru Kanno

Junichi Ikeda

Saburo Sasaki

Akihiro Fuse

Yutaka Sano

Hiroyuki Abe

Koji Oshikiri

Koji Takeo

Satoru Numakura

Takeshi Nanjo

Atsuhiro Oizumi

Atsuhiro Ohizumi

An image forming apparatus includes an image input device that reads an image to obtain image data and a printer engine that forms an image on a medium based on image data. A bus of a PCI Express standard is used to transfer data. Storage areas serving as end points of the standard and hardware resources that transmit data and receive image data to and from the storage areas are connected to an identical switch according to the PCI Express standard. Specifically, an input/output area, an image input device, and a printer engine are connected to one switch, and a storage area, a compressor, and a hard disk is connected to another switch.

Image processing apparatus and image forming apparatus

An odd number of inverter circuits are connected with each other so as to form a ring. A first current-control element is provided between an oscillation signal line which is used for connecting adjacent inverter circuits and a power-source-potential point, a current flowing through the first current-control element varying by a first control signal. A second current-control element is provided between the oscillation signal line and a ground point, a current flowing through the second current-control element varying by a second control signal.

Voltage-controlled oscillator including current control element

A substrate biasing circuit includes a logical threshold potential output circuit including transistors formed on a semiconductor substrate and generating a logical threshold potential. A potential compare control circuit compares the logical threshold potential with a reference potential and generating a control potential based on a comparison result. A substrate bias generating circuit generates, as long as the control potential indicates that the logical threshold potential is not equal to the reference potential, a substrate potential applied to the semiconductor substrate so that the logical threshold potential is equal to the reference potential, and stops operating after the logical threshold potential becomes equal to the reference potential. A switch circuit breaks a pass-through current path formed in the logical threshold potential output circuit when the control potential indicates that the logical threshold potential becomes equal to the reference potential.

Substrate biasing circuit and semiconductor integrated circuit device

A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.

High sensitivity improved photoelectric imaging device with a high

An image sensor includes a substrate made of an insulating and transparent material, a plurality of photoelectric conversion elements which are provided on the substrate and arranged in a predetermined direction of the substrate, a driving circuit, which is provided on the substrate and extends parallel to the photoelectric conversion elements, for driving the photoelectric conversion elements, and a conductive film adjacent to at least one of the photoelectric conversion elements and the driving circuit, for receiving an external noise signal.

Image sensor and optical reading unit using the same

This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer. This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.

Electrophotographic element with silicide treated porous Al.sub.2

The present invention is concerned with a photosensitive material for electrophotography that comprises forming a photosensitive layer on a substrate, wherein said photosensitive layer is constructed by laminating a charge transfer layer, a first charge carrier generating layer and a second charge carrier generating layer in order from said substrate side to free surface, and said charge transfer layer and second charge carrier generating layer each has a band gap wider than that of said first charge carrier generating layer.

Photosensitive material for electrophotography

Growing community of inventors

Miyagi, Japan

Yasuyuki Shindoh