Mitsubishi Electric Corporation

Yasuyuki Sanda

Dai Nakajima

Haruna Tada

Hodaka Rokubuichi

Kiyofumi Kitai

Masaki Goto

Kiyoshi Shibata

Hiroyuki Yoshihara

Kuniyuki Sato

Hayato Terada

A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The uneven portion and the uneven portion are fitted together by crimping so that the module base of the power module unit and a heat dissipation spreader of the heat sink are integrated. The buffer depression portion is left as a space.

Power semiconductor device and method of manufacturing the same, and power conversion device

A semiconductor device and a semiconductor module which can be reduced in size while ensuing insulation are provided. In the semiconductor device, a lead frame on which a circuit pattern is formed is provided on an insulation substrate; the circuit pattern of the lead frame is joined to the back-side electrode of a semiconductor chip via a solder layer, and the lead frame is electrically connected with the top-side electrode of the semiconductor chip via a wire; the lead frameincludes a terminal inside a mold-sealing resin and a terminal exposed to a space outside the mold-sealing resin, and the terminal is connected to a terminal block via a solder layer; and the lead frame, the insulation substrate, the semiconductor chip and the terminal block are integrally molded and sealed by the mold-sealing resin.

Semiconductor device and semiconductor module with a highest portion of a terminal lower than a highest portion of the mold sealing resin

A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Semiconductor device and method for manufacturing the same

A metal component and a heat dissipation member are integrated with each other in a plurality of protrusion-recess portions where the plurality of recess portions and the plurality of protrusion portions contact each other. A first protrusion-recess portion as a part of the plurality of protrusion-recess portions is greater in height direction dimension than a second protrusion-recess portion other than the first protrusion-recess portion among the plurality of protrusion-recess portions. A wall surface of the first protrusion-recess portion includes a first wall surface portion having a first inclination angle to a height direction, and a second wall surface portion having a second inclination angle different from the first inclination angle.

Semiconductor device and method of manufacturing the same

A thermal conductivity measurement device comprises: first and second clamping members which clamp an object; a heating member which has a contacting end surface which contacts a distal end surface of the first clamping member through a first axial correction member, and a distal end surface on the reverse side of the contacting end surface; a cooling member which has a contacting end surface which contacts a distal end surface of the second clamping member through a second axial correction member, and a distal end surface on the reverse side of the contacting end surface; a plurality of temperature sensors disposed on the clamping members; and a mechanism which applies a pressing force between the heating member and the cooling member. At least one surface of the first axial correction member and the second axial correction member has a convex curved shape, and the other surface is a flat surface.

Thermal conductivity measurement device and thermal conductivity measurement method

This thermal conductivity measurement apparatus has a first holding member which has an end face that contacts an object to be measured and a distal end face; a second holding member which has an end face that contacts an object to be measured and a distal end face; a heating member which has an end face which abuts the distal end face of the first holding member and a distal end face, and which heats the first holding member; a cooling member which has an end face that abuts the distal end face of the second holding member and a distal end face, and which cools the second holding member; a plurality of temperature sensors provided at the first and the second holding members; and a pressing force application mechanism that applies pressing force to the first holding member, the second holding member, and the object to be measured.

Thermal conductivity measurement apparatus and thermal conductivity measurement method

A swaged heat includes a fin base having an outer periphery, and formed with a first fin insert groove and a second fin insert groove interposing a swage portion of a bi-forked shape in between, a first fin fixed to the first fin insert groove of the fin base using the swage portion, a second fin fixed to the second fin insert groove of the fin base using the swage portion, a panel having an opening portion, and placed on the outer periphery of the fin base. The thickness of the outer periphery is smaller than that of the fin base.

Growing community of inventors

Tokyo, Japan

Yasuyuki Sanda