Showa Denko K.k.

Showa Denko Kabushiki Kaisha

Yasuyuki Sakaguchi

Naoki Oyanagi

Hideki Hayashida

Taizo Ito

Yutaka Saito

Akihiko Sugai

Kenji Momose

Michiya Odawara

Yutaka Tajima

Shigetaka Murasato

Yoshihiko Miyasaka

Atsushi Takagi

Yasuo Hosokawa

Tomohiro Syounai

Sigemasa Nakamura

Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H&#x2014;SiC single-crystal substrate having an off-axis angle of 5&#xb0; or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400&#xb0; C. and 1600&#xb0; C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiHgas and CHgas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiHgas and the supply of CHgas are cut off simultaneously, the substrate temperature is maintained until the SiHgas and the CHgas are evacuated, and then the temperature is decreased.

Silicon carbide epitaxial wafer and manufacturing method therefor

A method of manufacturing of a semiconductor device () includes: a fine pattern forming step of forming p-type impurity regions () and surface ohmic contact electrodes () using a stepper, after forming an N-type epitaxial layer () on a SiC single-crystal substrate (); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes () and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode () on the SiC single-crystal substrate (); a surface Schottky contact electrode forming step of forming a Schottky metal portion () connected to the p-type impurity regions () and the surface ohmic contact electrodes (); and a step of forming a surface pad electrode () that covers the Schottky metal portion ().

Semiconductor device and method of manufacturing the same

A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.

Method for producing silicon carbide single crystal

A growth crucible () for depositing on a seed crystal substrate () a silicon carbide single crystal () using a sublimate gas of a silicon carbide raw material () is disposed inside of an outer crucible (). During the course of silicon carbide single crystal, a silicon raw material () is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.

Silicon carbide single crystal and method and apparatus for producing the same

Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging containersuch that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamberhousing therein a substrateand a layer comprising a GaN-type compound started from this ammonia is formed on the substrate

Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor

Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber housing therein a substrate , and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate

An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.

A1GaInP light emitting diode

A semiconductor light emitting diode includes a compound semiconductor substrate and a double-hetero structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.1, 0&lt;y&lt;1) as an active layer, and an upper clad layer of the double-hetero structure has a larger band gap energy (Eg) than the band gap energy of the active layer and has a thickness of 3-50 .mu.m.

Growing community of inventors

Chichibu, Japan

Yasuyuki Sakaguchi