Renesas Electronics Corporation

Hitachi, Ltd.

Hitachi Metals, Ltd.

Renesas Technology Corp.

Hitachi Device Engineering Co., Ltd.

Ttpcom Limited

Yasuyuki Okuma

Masanao Yamaoka

Yasuhisa Shimazaki

Noriaki Maeda

Toshiaki Sano

Masao Morimoto

Shigenobu Komatsu

Satoshi Tanaka

Taizo Yamawaki

Masaru Kokubo

Yutaka Igarashi

Tatsuo Nakagawa

Robert Astle Henshaw

Yusaku Katsube

Hiroaki Matsui

Yohei Nakamura

Shinya Kajiyama

Takahide Terada

Masatoshi Morishita

Takuma Nishimoto

Tsukasa Fujimori

Masamichi Tanabe

Koichi Yahagi

A detection device has a pinching sensor and a detecting unit. The pinching sensor has a dielectric layer in which a linear conductor layer is formed, and conductor layers arranged on top and bottom surfaces of the dielectric layer, a slit being formed on at least one of the conductor layers arranged on the top and bottom surfaces. The detecting unit supplies a high-frequency signal to an input portion of the linear conductor layer, generates an electric field around a slit portion of the conductor layer on which the slit is formed, and detects a change in a reflection coefficient at the input portion, the change being caused by a change of the electric field generated by interference with a detected object.

Pinching sensor and detection device

According to one embodiment, a sensor system includes a sensor node that collects data; and a data collection apparatus that is wirelessly connected to the sensor node. The sensor node encrypts the sensor data measured by the sensor device using the received encryption key according to the received measurement parameter and transmits the encrypted sensor data to the data collection apparatus. The data collection apparatus decrypts the sensor data received from the sensor node, stores the decrypted sensor data in a storage unit when the sensor data is normally decrypted, and discards non-decrypted sensor data and transmits the measurement parameter and the encryption key to the sensor node when the sensor data is not normally decrypted.

Sensor system for collecting data using an encryption key

An ultrasound diagnosis device includes: an ultrasound probe which transmits an ultrasound wave toward a examinee and receives a reflected wave from the examinee; and a main device which controls the transmitting and receiving of the ultrasound waves from the ultrasound probe and is operated to receive a receiving signal obtained by receiving the reflected wave from the examinee by the ultrasound probe, to generate an ultrasound image of the examinee, and to display the ultrasound image on a display screen, wherein the ultrasound probe includes a plurality of subarrays having a plurality of element circuits transmitting and receiving ultrasound signals and a plurality of reference voltage sources, and the plurality of subarrays and the plurality of reference voltage sources have a one-to-one correspondence.

Ultrasound probe and ultrasound diagnosis device using the same

A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.

Semiconductor integrated circuit device and system

Semiconductor integrated circuit device and system with memory cell array

A power supply circuit has: an input terminal; an output terminal; and a digital power supply circuit and an analog power supply circuit connected in parallel between the input terminal and the output terminal. Further desirably, the analog power supply circuit is a circuit that the minimum resistance value of an output equivalent resistance between an input terminal and an output terminal of the analog power supply circuit is an output equivalent resistance equal to or lower than the minimum ON resistance among those of switch circuits configuring the switch array unit of the digital power supply circuit and having a plurality of ON resistances, or a circuit that the minimum resistance value is an output equivalent resistance equal to or lower than the minimum resistance value among those of switch circuits configuring the switch array unit of the digital power supply circuit and having series-connected resistances having resistance values.

Power supply circuit with reduced output voltage oscillation

Semicondutor integrated circuit device and system

A high-frequency amplifier with high linearity is provided that is easy to integrate and is resistant to variations in transistor characteristics due to process variation. The high-frequency amplifier includes a bias circuit to bias an amplifying element that amplifies high frequencies. The bias circuit has a feedback circuit including a feedback loop in which a circuit with low pass characteristics and having a capacitor one end of which is grounded is inserted. A stable bias voltage is thus provided, which makes it possible to improve the linearity of the high-frequency amplifier.

High-frequency amplifier, high-frequency module, and mobile wireless apparatus using the same

A transmitter is provided which includes a transmitting circuit that does not require a high-performance low noise VCO restricting cost reduction thereof and that can reduce the number of parts without requiring an RF filter. A direct conversion that does not require a transmission VCO is applied to the transmitting circuit. In order to achieve noise reduction in a receiving band, low-pass filters are provided a IQ input sections of a modulator that converts IQ signals into RF signals. In comparison with a conventional transmitter using offset PLL, an external VCO required in addition to an RF integrated circuit, a power amplifier, and a front end circuit is reduced. Even in current transistor performance, by using a filter having rapid waveform characteristics such as a SAW more inexpensive than the VCO, or the like, it is possible to provide a GSM/GSM 1800/GSM1900 triple band transmitter.

Direct-conversion transmitting circuit and integrated transmitting/receiving circuit

A receiver apparatus is provided with a receiver section including an amplifying stage for amplifying a high frequency signal received by an antenna, a frequency converting stage for converting a frequency of the output signal of the amplifying stage, a local oscillator for supplying a local oscillating signal to the frequency converting stage, and a signal processing section for supplying a control signal to the receiver section depending on signal intensity inputted to the receiver section, or to the signal processing section from the receiver section. The frequency converting section includes a plurality of parallel frequency converters, and an adder for adding output signals of the frequency converters. The signal processing section controls the number of the frequency converters to be operated.

Receiver apparatus controlling the power consumption according to the reception signal level

Growing community of inventors

Hachioji, Japan

Yasuyuki Okuma