Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Imec

Stichting Imec Nederland

Toppan Printing Co., Ltd.

Tokyo Institute of Technology

Panosonic Corporation

Yasuyuki Naito

Kunihiko Nakamura

Kouhei Takahashi

Naoki Tambo

Yoshito Nakanishi

Masaki Fujikane

Katsuaki Abe

Noriaki Saito

Kentaro Miyano

Yoshifumi Hosokawa

Takashi Kawasaki

Norisato Shimizu

Keiji Onishi

Morio Tomiyama

Hiroshi Nakatsuka

Xavier Rottenberg

Seiji Fujihara

Jan Bienstman

Hendrikus A C Tilmans

Takehiko Yamakawa

Satoshi Sakamoto

Hiroshi Handa

Hendrikus Tilmans

Martijn Goedbloed

Satoshi Tsukamoto

Masato Nakayama

Akinori Hashimura

Geert Altena

Takumi Hirase

Dennis Hohlfeld

Philippe Helin

Kosei Ohura

Michael Renaud

Robertus T F Van Schaijk

Rob Van Schaijk

Christine De Nooijer

An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

Infrared sensor and method of controlling infrared sensor

A thermoelectric conversion device includes: a first thermoelectric conversion module, a first insulating layer, and a second thermoelectric conversion module. The first (second) thermoelectric conversion module includes one or two or more thermoelectric conversion elements, a first (third) connection electrode, and a second (fourth) connection electrode. The thermoelectric conversion elements of the first (second) thermoelectric conversion module are electrically connected to the first (third) connection electrode and the second (fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a stacking direction of the first thermoelectric conversion module, the first insulating layer, and the second thermoelectric conversion module.

Thermoelectric conversion device, method for controlling thermoelectric conversion device, method for cooling and/or heating object by using thermoelectric conversion device, and electronic device

A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.

The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.

Multilayer body and crystalline body

A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.

Gas sensor

Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

Infrared sensor and infrared sensor array

A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.

Thermoelectric conversion element and thermoelectric conversion device

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Infrared sensor, infrared sensor array, and method of manufacturing infrared sensor

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

Infrared sensor and method for cooling bolometer infrared ray receiver of infrared sensor

An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.

Infrared sensor and phononic crystal

An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.

Thin film and method of using the same

A terahertz wave spectrometry system that is capable of identifying analyzing target molecules contained in an analyte even if the analyte contains water, by activating a water remover to remove water according a comparison of absorption spectrums so that water in the analyte is easily removed without causing the analyzing target molecules to disappear due to decomposition or denaturation.

Terahertz wave spectrometry system

Infrared sensor

Provided is a terahertz wave spectrometry system that is capable of easily identifying and quantitating an analyzing target molecule in an analyte, even if the analyte contains water, by calculating a baseline function expressing the absorption characteristic of water peculiar to the terahertz wave.

Growing community of inventors

Osaka, Japan

Yasuyuki Naito